Poster + Paper
13 September 2021 Use of sacrificial zinc oxide template layers for epitaxial lift-off of yttria-stabilised zirconia thin films
Author Affiliations +
Conference Poster
Abstract
275 nm-thick Yttria-stabilised zirconia (YSZ) layers were grown on 240 nm-thick epitaxial (0002)-oriented ZnO buffer layers on c-sapphire substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) studies revealed high quality epitaxial growth with the YSZ having a preferential (111) orientation and a root mean square surface roughness of 1.4 nm over an area of 10 um x 10 um. The YSZ top surface was then temporary bonded to an Apiezon W wax carrier and the sample was immersed in 0.1M HCl so as to preferentially etch/dissolve away the ZnO underlayer and release of the YSZ from the sapphire substrate. XRD revealed only the characteristic (111) peak of YSZ after lift-off and thus confirmed both the dissolution of the ZnO and the preservation of the crystallographic integrity of the YSZ on the wax carrier. Optical and Atomic Force Microscopy revealed some buckling, roughening and cracking of the lifted YSZ, however, which was probably due to tensile epitaxial strain release.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Rogers, T. Maroutian, V. E. Sandana, P. Lecoeur, F. H. Teherani, P. Bove, and M. Razeghi "Use of sacrificial zinc oxide template layers for epitaxial lift-off of yttria-stabilised zirconia thin films", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116872C (13 September 2021); https://doi.org/10.1117/12.2591843
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Zinc oxide

Epitaxial lateral overgrowth

Crystals

Atomic force microscopy

Silicon photonics

Photography

Sapphire

Back to Top