Pupil optimization for after etch defectivity: what imaging metrics matter?

Andreas Frommhold; Joern-Holger Franke; Kathleen Nafus; Gijsbert Rispens; Mark J. Maslow

doi:10.1117/12.2600967

19 October 2021 Pupil optimization for after etch defectivity: what imaging metrics matter?

Andreas Frommhold, Joern-Holger Franke, Kathleen Nafus, Gijsbert Rispens, Mark J. Maslow

Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 118540H (2021) https://doi.org/10.1117/12.2600967
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

A series of experiments was conducted to study how defectivity depends on NILS, aerial image intensity and depth-offocus. Three sets of illuminations were designed to vary only one of these parameters while keeping the others constant for a 48 nm pitch orthogonal contact hole array. The focus was on the after etch defectivity, for which two different etch processes were studied. Both on-wafer LCDU and defectivity for the two etch processes were correlated to the different illumination settings. In summary, we found that defect levels correlate best with the maximum intensity for missing holes and minimum intensity for merging holes. Depth-of-focus appears to have little or no impact on defectivity for the nominal focus condition.

Conference Presentation

Citation Download Citation

Andreas Frommhold, Joern-Holger Franke, Kathleen Nafus, Gijsbert Rispens, and Mark J. Maslow "Pupil optimization for after etch defectivity: what imaging metrics matter?", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540H (19 October 2021); https://doi.org/10.1117/12.2600967

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