The material property and electron emission for NEA GaN vacuum electron source

Jianliang Qiao; Yuan Cao; Shengzhao Wang; Yunfeng Wang

doi:10.1117/12.2605036

13 December 2021 The material property and electron emission for NEA GaN vacuum electron source

Jianliang Qiao, Yuan Cao, Shengzhao Wang, Yunfeng Wang

Proceedings Volume 12074, 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices; 120740E (2021) https://doi.org/10.1117/12.2605036
Event: Tenth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2021), 2021, Chengdu, China

Abstract

The plane launch of electron beam can be realized easily under the light for negative electron affinity (NEA) GaN vacuum electron source. With excellent stability in ultra high vacuum environment, GaN vacuum electron source is the best choice in the fields of microelectronics and electron beam lithography etc.. Using the activation and evaluation system for NEA photocathode, the GaN vacuum electron source material sample was activated with Cs and O, and the photocurrent curve for GaN photocathode was gotten. Aiming at the theoretical and technical problems in practical applications, surrounding the material property parameters of GaN vacuum electron source and the electron transport characteristics from the bulk to the surface, the photoemission theory was researched for NEA GaN vacuum electron source. And the application of NEA GaN vacuum electronic source was prospected.

Citation Download Citation

Jianliang Qiao, Yuan Cao, Shengzhao Wang, and Yunfeng Wang "The material property and electron emission for NEA GaN vacuum electron source", Proc. SPIE 12074, 10th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Novel Optoelectronic Functional Materials and Devices, 120740E (13 December 2021); https://doi.org/10.1117/12.2605036

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