640×512 back illuminated EMCCD

Qingfei Liu; Jianqiang Zhao; Shuxi Xu; Fang Dai; Jixue Chen; Wei Zhang; Yichen Duan

doi:10.1117/12.2622526

27 March 2022 640×512 back illuminated EMCCD

Qingfei Liu, Jianqiang Zhao, Shuxi Xu, Fang Dai, Jixue Chen, Wei Zhang, Yichen Duan

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 1216922 (2022) https://doi.org/10.1117/12.2622526
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

640×512 back illuminated EMCCD is based on 640×512 front-face illuminated EMCCD. It is manufactured by wafer bonding, back thinning, laser annealing, film sputtering and other back illumination processes. After parameter test and imaging verification, 640×512 back illuminated EMCCD has the characteristics of high quantum efficiency, high detection sensitivity and anti-blooming, which is suitable for imaging in low illumination environment.

Citation Download Citation

Qingfei Liu, Jianqiang Zhao, Shuxi Xu, Fang Dai, Jixue Chen, Wei Zhang, and Yichen Duan "640×512 back illuminated EMCCD", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 1216922 (27 March 2022); https://doi.org/10.1117/12.2622526

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