Paper
14 March 2023 Native InGaN red-green-blue micro-LEDs for full color micro-displays
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Abstract
A full InGaN structure is designed on the partially relaxed InGaN pseudo-substrate fabricated by Soitec (InGaNOS). By combining its in-plane lattice parameter and the growth conditions of the active zone, it permits to cover the whole visible range with thin quantum well width, thus by increasing the InN mole fraction in the quantum wells. An InGaN/GaN superlattice based buffer layer and a new InGaNOS substrate with a low V shaped defect density helps to get a better crystalline quality. It leads to an internal quantum efficiency higher than 10% at 640 nm. 10 µm circular micro-light emitting diodes show a red electroluminescence with a central emission wavelength of 625 nm. An external quantum efficiency of 0.14% at 8 A/cm² at 625 nm is also demonstrated. The light extraction efficiency is estimated to be below 4%, mainly due to the emission from backside through the buried oxide and the sapphire substrate.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Dussaigne, F. Barbier, H. Haas, J. C. Pillet, B. Samuel, G. Veux, and P. Le Maitre "Native InGaN red-green-blue micro-LEDs for full color micro-displays", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 1244108 (14 March 2023); https://doi.org/10.1117/12.2647988
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KEYWORDS
Indium gallium nitride

Gallium nitride

Quantum buffers

Indium nitride

Sapphire

Emission wavelengths

Light emitting diodes

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