Fundamentals of EUV stack for improving patterning performance

Nanoka Miyahara; Soichiro Okada; Hiroyuki Fujii; Satoru Shimura

doi:10.1117/12.2657056

30 April 2023 Fundamentals of EUV stack for improving patterning performance

Nanoka Miyahara, Soichiro Okada, Hiroyuki Fujii, Satoru Shimura

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124981E (2023) https://doi.org/10.1117/12.2657056
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

Extreme ultraviolet (EUV) lithography has already utilized for high volume manufacturing, and miniaturization by numerical aperture (NA) 0.33 is approaching to the limit. Pitch 24 nm line and space (L/S) resist patterns can be resolved with single exposure at even NA 0.33. However, etch transfer performance to underlayer materials is one of the issues. Especially, in narrow pitch case, it is very difficult to etch due to the lack of resist mask resistance. Therefore, resist pattern thickening process with optimized development process and underlayer state was studied and verified the pattern height impact at our past paper. As a result, it found that combination of the underlayer (UL) kinds and their status was one of the key points to lead high-quality patterns. In this paper, optimized stack structure narrow pitch pattern and lithography performance. As a result, in experiments toward High NA EUV, 24 nm pitch L/S pattern could be patterned (near smallest size by NA 0.33) by selecting the optimal ML/UL combination, and some defect free process windows were kept between defect cliffs.

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Nanoka Miyahara, Soichiro Okada, Hiroyuki Fujii, and Satoru Shimura "Fundamentals of EUV stack for improving patterning performance", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124981E (30 April 2023); https://doi.org/10.1117/12.2657056

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