Influence of the anion in tin-based EUV photoresists properties

Quentin Evrard; Najmeh Sadegh; Chao Chun Hsu; Nicola Mahne; Angelo Giglia; Stefano Nannarone; Yasin Ekinci; Michaela Vockenhuber; Akira Nishimura; Tsuyoshi Goya; Takuo Sugioka; Albert M. Brouwer

doi:10.1117/12.2658498

30 April 2023 Influence of the anion in tin-based EUV photoresists properties

Quentin Evrard, Najmeh Sadegh, Chao Chun Hsu, Nicola Mahne, Angelo Giglia, Stefano Nannarone, Yasin Ekinci, Michaela Vockenhuber, Akira Nishimura, Tsuyoshi Goya, Takuo Sugioka, Albert M. Brouwer

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124980Z (2023) https://doi.org/10.1117/12.2658498
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

In this work we assess the effect of the change of counter-anions on the photolithography properties of butyl-Sn₁₂ oxo hydroxo cages. The hydroxide anions were exchanged with tetrakis(pentafluorophenyl)borate (B(PFP)₄)^- and (phenyl) trifluoroborate (BF₃Ph)^- anions which exhibit a photoabsorption cross section at 92 eV that is similar to that of the butyl-Sn₁₂ oxo hydroxo cages. The degradation of the EUV photoresist was monitored via in-situ EUV exposure followed by X-ray photoelectron spectroscopy (XPS) at the BEAR beamline (Elettra, Italy) at the C1s-edge. Both systems exhibit similar carbon losses of around 25% for 100 mJ/cm² dose. The Sn₁₂ cluster with acetate anions, as a reference compound, exhibit a loss of C1s XPS signal from the butyl chains of around 23% for the same 100 mJ/cm² EUV exposure dose indicating a larger degradation of the Sn₁₂ cluster for the latter. We also evaluated the patterning performance of the Sn₁₂(B(PFP)₄) resist via interference lithography at the XIL-II beamline (PSI, Switzerland) and found the positive tone character of the resist and its ability to write lines with 50 nm half pitch resolution for doses of 30 mJ/cm². In contrast, Sn₁₂(BF₃Ph) acts as a sensitive negative tone resist, with doses of 12.5 mJ/cm² sufficient to write 50 nm half pitch lines.

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Quentin Evrard, Najmeh Sadegh, Chao Chun Hsu, Nicola Mahne, Angelo Giglia, Stefano Nannarone, Yasin Ekinci, Michaela Vockenhuber, Akira Nishimura, Tsuyoshi Goya, Takuo Sugioka, and Albert M. Brouwer "Influence of the anion in tin-based EUV photoresists properties", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124980Z (30 April 2023); https://doi.org/10.1117/12.2658498

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