Presentation + Paper
21 November 2023 Improvements in the measurement of local critical dimension uniformity for holes and pillars
Author Affiliations +
Abstract
Background: Accurate measurement of local critical dimension uniformity (LCDU) and local pattern placement errors (LPPE) caused by stochastics is a critical task in metrology for advanced technology nodes, especially for EUV lithography. Aim: Optimizing the settings of a metrology tool to either reduce biases in LCDU and LPPE measurement, or to reliably measure and remove those biases, is critical to stochastics metrology accuracy. Approach: Four different scan modes and two different scan orientations are compared for the measurement of staggered arrays of contact holes on a scanning electron microscope (SEM), and both biased and unbiased LCDU and LPPE are compared. Results: The Hitachi SEM scan modes designed for the measurement of 2D patterns have the minimum sensitivity to scan orientation and differences in X and Y metrology results. Further, measuring and subtracting SEM biases increases the accuracy of the best scan mode results, but also reduces the differences between scan modes by 3X. Conclusions: SEM scan modes designed for 2D patterns produce lower bias in the measurement of contact hole LCDU and LPPE. Measuring and removing biases produce the maximum accuracy for all scan modes.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Chris A. Mack, Christie Delvaux, Danilo De Simone, and Gian Lorusso "Improvements in the measurement of local critical dimension uniformity for holes and pillars", Proc. SPIE 12750, International Conference on Extreme Ultraviolet Lithography 2023, 127500G (21 November 2023); https://doi.org/10.1117/12.2688355
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KEYWORDS
Edge detection

Scanning electron microscopy

Stochastic processes

Critical dimension metrology

Extreme ultraviolet

Extreme ultraviolet lithography

Eye

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