New EUV mask blank for N3 technology node and beyond

S. H. Yang; W. T. Chen; C. Y. Huang; Chien-Min Lee; Joy Huang; Shy-Jay Lin; C. L. Chen; Yoshiaki Ikuta; Tomohiko Satoh; Yosuke Nakakita

doi:10.1117/12.2688179

21 November 2023 New EUV mask blank for N3 technology node and beyond

S. H. Yang, W. T. Chen, C. Y. Huang, Chien-Min Lee, Joy Huang, Shy-Jay Lin, C. L. Chen, Yoshiaki Ikuta, Tomohiko Satoh, Yosuke Nakakita

Author Affiliations +

Proceedings Volume 12751, Photomask Technology 2023; 127510G (2023) https://doi.org/10.1117/12.2688179
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

EUV Mask for High Volume Manufacturing of semiconductor device have already became accomplished facts. Therefore, developing a flexible and controllable process capability for various film stack EUV blank structure and production is crucial. The requirements of high compatible process window need to sustain 1-nm critical dimensions (CD) control and etch stop on capping layer with zero damage. For conventional EUV blank, dual layer TaN substrate is proposed as state-of-the-art EUV photomask blank absorber material being comprehensively evaluated. Film stack material needs to be co-optimized with developing and etching process to keep pattern profile/fidelity, capping layer quality and durability, and defect density. Hence first of all, the novel etching strategy for mitigating capping layer damage to have better Ru durability improvement will be reported. Secondly, the developing process optimization to lower the defect counts caused by wettability change due to various absorber material will show. Finally, the pattern fidelity change caused by various etching selectivity between hard mask and absorber will be discussed in this paper.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

S. H. Yang, W. T. Chen, C. Y. Huang, Chien-Min Lee, Joy Huang, Shy-Jay Lin, C. L. Chen, Yoshiaki Ikuta, Tomohiko Satoh, and Yosuke Nakakita "New EUV mask blank for N3 technology node and beyond", Proc. SPIE 12751, Photomask Technology 2023, 127510G (21 November 2023); https://doi.org/10.1117/12.2688179

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