Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs

Nan Lei Wang; Neng Haung Sheng; M. F. Chang; William W. Ho; J. Aiden Higgins; Peter M. Asbeck; Gerard J. Sullivan

doi:10.1117/12.20912

1 August 1990 Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs

Nan Lei Wang, Neng Haung Sheng, M. F. Chang, William W. Ho, J. Aiden Higgins, Peter M. Asbeck, Gerard J. Sullivan

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20912
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The microwave power performance of AlGaAs/GaAs self-aligned HBTs from 10 to 35 GHz is described. A record value of 68% power added efficiency was obtained at 10 GHz. At 18 GHz, 16.3 dB associated gain was achieved with 1.83 W/mm power density and 40% efficiency. At 35 GHz, a 15 dB small signal gain was observed. The tested HBTs have 2 micron feature size. Further improvement is expected with optimization of the HBT structure.

Citation Download Citation

Nan Lei Wang, Neng Haung Sheng, M. F. Chang, William W. Ho, J. Aiden Higgins, Peter M. Asbeck, and Gerard J. Sullivan "Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20912

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