Ultra-high throughput electron beam lithography for wafer size nanoimprint mold fabrication

Takaomi Ito; Takumi Watanabe; Satoshi Nagai; Sung-won Youn; Kenta Suzuki; Hiroshi Hiroshima

doi:10.1117/12.2684952

29 September 2023 Ultra-high throughput electron beam lithography for wafer size nanoimprint mold fabrication

Takaomi Ito, Takumi Watanabe, Satoshi Nagai, Sung-won Youn, Kenta Suzuki, Hiroshi Hiroshima

Proceedings Volume 12915, Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology; 1291507 (2023) https://doi.org/10.1117/12.2684952
Event: Photomask Japan 2023, 2023, Online Only

Abstract

Electron Beam Lithography (EBL) has a capability to fabricate fine patterns with nanometer order, and is thought to be one of the possible technologies to fabricate a nanoimprint mold with the pattern size less than several 100 nm. We have developed Ultra-High Throughput EBL system, which equipped an Electron Optical Column (EOC) with a large beam current, and a large deflection field for fabricating a nanoimprint mold with wafer size. “ELF-10000” is the first model of our Ultra-High Throughput EBL, which has a deflection field of 10 mm square. And, we achieved to the drawing time of 4 hour 14 minutes to fabricate a mixed pattern of micron size and nanometer sizes on entire surface of 8 inch wafer. Moreover, we have improved the field stitching accuracy of the EBL system, and released the new model “ELSHAYATE”. It has 5 mm square field size, which is a half of the first model and has the field distortion less than half. This new model is expected to be a useful tool for nanometer order pattern drawings on the area larger than 10 mm square, which may have several possible applications for wafer size nanoimprint mold.

Citation Download Citation

Takaomi Ito, Takumi Watanabe, Satoshi Nagai, Sung-won Youn, Kenta Suzuki, and Hiroshi Hiroshima "Ultra-high throughput electron beam lithography for wafer size nanoimprint mold fabrication", Proc. SPIE 12915, Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology, 1291507 (29 September 2023); https://doi.org/10.1117/12.2684952

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KEYWORDS

Electron beam lithography

Nanoimprint lithography

Semiconducting wafers

Fabrication

Silicon

Distortion

Scanning electron microscopy

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