Controlling chemical segregation in EUV resists by varying viscosity and evaporation rate during the spin coating process

Eshan Thilakarathna; Jarron Maguire; Ashley J. Aldrin; Gregory Denbeaux; Robert Brainard

doi:10.1117/12.3010930

22 April 2024 Controlling chemical segregation in EUV resists by varying viscosity and evaporation rate during the spin coating process

Eshan Thilakarathna, Jarron Maguire, Ashley J. Aldrin, Gregory Denbeaux, Robert Brainard

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 1295709 (2024) https://doi.org/10.1117/12.3010930
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Chemically amplified photoresists (CAR) are the leading photoresists used in Extreme Ultraviolet (EUV) lithography. Chemical stochastics are an issue for defectivity and roughness due to the distribution of the multiple components of the resist. It is believed that the non-random distribution of components occurs primarily during the spin coating process, as the resist dries, and the solvent concentration is reduced. Inhibiting the unwanted chemical segregation can be controlled by increasing the evaporation rate during the spin coating process. In addition to reducing the chemical segregation of the resist through the spin coating process, it is important to compare between different resist formulations for their risk of chemical segregation. We will show accelerated testing processes using solvent vapor annealing to help identify the relative risk of segregation between multiple commercial photoresists.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Eshan Thilakarathna, Jarron Maguire, Ashley J. Aldrin, Gregory Denbeaux, and Robert Brainard "Controlling chemical segregation in EUV resists by varying viscosity and evaporation rate during the spin coating process", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 1295709 (22 April 2024); https://doi.org/10.1117/12.3010930

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