Evaluation of phenolic resists for 193 nm surface imaging

Mark A. Hartney; Donald W. Johnson; Allen C. Spencer

doi:10.1117/12.46375

1 June 1991 Evaluation of phenolic resists for 193 nm surface imaging

Mark A. Hartney, Donald W. Johnson, Allen C. Spencer

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46375
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A variety of novolac-based polymers and blends with photoactive compounds were studied for their suitability as resists in a 193-nm positive-tone silylation process. The addition of photoactive compound was found to reduce the sensitivity of the resist and to hinder the diffusion of the silylating agent. Pure meta-cresol novolacs and polyvinylphenols, both of which can be polymerized to high (> 10,000) molecular weights show the best sensitivity for this process. Diffusion rates correlate with the molar volume of the silylating agent, although the activation energy does not. Resolution of 0.2-micrometers line-and-space gratings has been achieved with the polyvinylphenol and meta-cresol novolac resins.

Citation Download Citation

Mark A. Hartney, Donald W. Johnson, and Allen C. Spencer "Evaluation of phenolic resists for 193 nm surface imaging", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46375

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