Dr. Donald W. Johnson Profile

Dr. Donald W. Johnson

President/CEO at Kayaku Advanced Materials Inc

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Publications (12)

Proceedings Article | 22 March 2007 Paper

Nanoimprinting with SU-8 epoxy resists

Donald Johnson, Harris Miller, Mike Kubenz, Freimut Reuther, Gabi Gruetzner

Proceedings Volume 6517, 65172A (2007) https://doi.org/10.1117/12.713710

KEYWORDS: Nanoimprint lithography, Semiconducting wafers, Epoxies, Polymers, Ultraviolet radiation, Temperature metrology, Coating, Etching, Lithography, Resistance

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Proceedings Article | 21 April 2006 Paper

Development of 3D out-of-plane SU-8 microlenses using modified micromolding in capillaries (MIMIC) technology

A. Llobera, R. Wilke, D. Johnson, S. Büttgenbach

Proceedings Volume 6185, 618512 (2006) https://doi.org/10.1117/12.661642

KEYWORDS: Microlens, Polymers, Capillaries, Lithography, Standards development, Spherical lenses, Microscopes, Photomasks, Ultraviolet radiation, Microlens array

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Proceedings Article | 24 July 2002 Paper

Maleimide-based tetrapolymers for use in lift-off resists

Cindy Chen, Rodney Hurditch, Donald Johnson, Daniel Nawrocki

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474224

KEYWORDS: Polymerization, Polymers, Photoresist materials, Coating

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Proceedings Article | 11 June 1999 Paper

Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects

Myoung-Soo Kim, Hyoung-Gi Kim, Hyeong-Soo Kim, Ki-Ho Baik, Donald Johnson, George Cernigliaro, David Minsek

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350277

KEYWORDS: Polymers, Photoresist materials, Etching, Lithography, Line edge roughness, Reactive ion etching, Image processing, Scanning electron microscopy, Photomicroscopy, Thin films

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Proceedings Article | 29 June 1998 Paper

Photoacid generators in chemically amplified resists

Yasuhiro Suzuki, Donald Johnson

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312350

KEYWORDS: Polymers, Deep ultraviolet, Diffusion, Chemically amplified resists, Lithography, Photoresist developing, Photoresist materials, Absorption, Integrated circuits, Image processing

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Proceedings Article | 7 July 1997 Paper

Evaluation of TER-SYSTEM resist for 193-nm imaging

Donald Johnson, Matthew Egbe, Cindy Chen, Lin Lin, Yihua Liao, Ngalula Bukasa, Yasuhiro Suzuki

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275900

KEYWORDS: Optical lithography, Image analysis, Manufacturing equipment, Manufacturing, Process control, Thermal analysis, Image resolution

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Exposures leading to 0.18 micrometer or better resolution are now being demanded by IC development. Photolithography using 193 nm exposure tools is the leading technology for the development of these next generation of devices. We are reporting on our development efforts on the TER resist system, which is a single layer resist designed for image evaluation applications at 193 nm exposure wavelengths. The TER-system has been developed to allow equipment manufacturers to evaluate their equipment, to provide R&D lithographers with materials to qualify their 193 nm equipment and to determine process control parameters. The TER-system is a chemically amplified methacrylate resist terpolymer. It is composed of methyl methacrylate (MMA), methacrylic acid (MAA) and an acid labile acrylic ester. We have evaluated different leaving groups as the acid labile component and we report on the initial results of several. We also examined different onium salts as the PAG component. One such example is di(t- butylphenyl)-iodonium p-toluenesulfonate and we report on other examples which were used. We evaluated the thermal stability of the resins and thermal analysis showed they start to decompose at about 125 degrees Celsius when tetrahydropyranyl methacrylate is used. Other more thermally stable systems were also evaluated. Post apply bake (PAB) temperatures of 100 - 125 degrees Celsius were preferably used with the tetrahydropyranyl ester. Other more thermally stable esters, such as tetrahydro-4-methyl-2-oxo-2H-pyran-4-yl methacrylate (mevalonic lactone), ethoxy-ethyl methacrylate and 3-oxo-cyclohexyl methacrylate, also are described. Exposures in the range of 5 - 50 mJ/cm² were typical and varied depending on the ester, the PAG, and other processing parameters. The acid catalyzed reaction rates after exposure were observed to be rapid. In all cases, post exposure bake (PEB) was typically carried out at 10 degrees Celsius or lower. Initial exposure evaluations at 193 nm and 248 nm show good resolution and image fidelity. The TER-system produced better than 0.225 micrometer resolution using 248 nm exposure equipment (NA equals 0.55) suggesting that better than 0.18 micrometer resolution is possible with 193 nm exposures. Results of resist synthesis, formulation and evaluation are presented.

Proceedings Article | 13 May 1994 Paper

Characterization of safe solvent PMMA resist variables for electron-beam application

Bruce Smith, Todd Eakin, Donald Johnson

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175825

KEYWORDS: Polymethylmethacrylate, Lithography, Electron beams, Critical dimension metrology, Photoresist processing, Silicon, Solids, Microelectronics, Process control, Optical lithography

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Proceedings Article | 15 September 1993 Paper

Evaluation of a 193-nm resist and imaging system

Donald Johnson, David Elliott

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154776

KEYWORDS: Imaging systems, Semiconducting wafers, Excimer lasers, Image resolution, Etching, Combined lens-mirror systems, 193nm lithography, Optical lithography, Deep ultraviolet, Lithography

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Proceedings Article | 1 June 1992 Paper

I-line, DUV, VUV, or x ray?

Donald Johnson, Chris Mack

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130344

KEYWORDS: Photomasks, Manufacturing, Lithography, Optical lithography, Deep ultraviolet, Vacuum ultraviolet, Optics manufacturing, X-rays, Phase shifts, Process control

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Proceedings Article | 1 June 1991 Paper

Evaluation of phenolic resists for 193 nm surface imaging

Mark Hartney, Donald Johnson, Allen Spencer

Proceedings Volume 1466, (1991) https://doi.org/10.1117/12.46375

KEYWORDS: Diffusion, Polymers, Picture Archiving and Communication System, Image processing, Silicon, Etching, Glasses, Optical lithography, Photoresist materials, Reactive ion etching

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Proceedings Article | 1 June 1990 Paper

EL2015: development of a submicron photoresist for G-, H-, and I-line exposure tools

Donald Johnson, Eitan Shalom, Glenn Dickey, Kelly Hale, Terry Pebbles

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20125

KEYWORDS: Photoresist materials, Picture Archiving and Communication System, Absorption, Photoresist developing, Etching, Plasma etching, Resistance, Plasma, Polymers, Optical imaging

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Proceedings Article | 1 June 1990 Paper

Sidewall profile control through processing and dye additives

Eitan Shalom, Donald Johnson, Kelly Hale, Terry Pebbles, William Curtis

Proceedings Volume 1262, (1990) https://doi.org/10.1117/12.20115

KEYWORDS: Photoresist developing, Absorption, Photoresist materials, Image processing, Picture Archiving and Communication System, Reflectivity, Process control, Dysprosium, Cadmium, Remote sensing

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Showing 5 of 12 publications

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