Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

Ji Zhao; Guann-pyng Li; K. Y. Liao; Maw-Rong Chin; J. Y.-C. Sun

doi:10.1117/12.139354

14 January 1993 Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

Ji Zhao, Guann-pyng Li, K. Y. Liao, Maw-Rong Chin, J. Y.-C. Sun

Author Affiliations +

Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139354
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain ((beta) ) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The (beta) increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.

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Ji Zhao, Guann-pyng Li, K. Y. Liao, Maw-Rong Chin, and J. Y.-C. Sun "Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); https://doi.org/10.1117/12.139354

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