Paper
21 December 1994 Electronic states and radiative recombination processes in ZnS-ZnSe short period superlattices
B. Gil, Massimo Di Blasio, T. Cloitre, P. Bigenwald, L. Aigouy, Olivier Briot, N. Briot, R. L. Aulombard
Author Affiliations +
Proceedings Volume 2346, II-VI Blue/Green Laser Diodes; (1994) https://doi.org/10.1117/12.197252
Event: Photonics for Industrial Applications, 1994, Boston, MA, United States
Abstract
This paper addresses the growth of short period ZnS-ZnSe superlattices by low pressure Metal-Organic Vapor Phase Epitaxy. We have correlated the photoluminescence line shape to the interface roughness within the context of a phenomenological interface disorder. Using additional reflectivity experiments we could develop envelope function calculation and find the band offset. Finally we have calculated the exciton binding energy in ZnSe-ZnS quantum wells in the context a the variational approach using models of varying sophistication.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Gil, Massimo Di Blasio, T. Cloitre, P. Bigenwald, L. Aigouy, Olivier Briot, N. Briot, and R. L. Aulombard "Electronic states and radiative recombination processes in ZnS-ZnSe short period superlattices", Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); https://doi.org/10.1117/12.197252
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KEYWORDS
Superlattices

Excitons

Zinc

Luminescence

Interfaces

Quantum wells

Semiconductor lasers

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