Electron-beam mask writing system for 0.25-um device generation

Kazui Mizuno; Katsuhiro Kawasaki; Hiroyuki Itoh; Hidetoshi Satoh; Yasuhiro Someda; Norio Saitou

doi:10.1117/12.245235

24 July 1996 Electron-beam mask writing system for 0.25-μm device generation

Kazui Mizuno, Katsuhiro Kawasaki, Hiroyuki Itoh, Hidetoshi Satoh, Yasuhiro Someda, Norio Saitou

Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245235
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan

Abstract

The new electron beam (EB) mask writing system based on both the HL-700MIII and HL-800D systems is developed. This system has been developed for semiconductor mass production of 0.25 μm design rule. To improve critical dimensions (CD), higher accelerated voltage of 50 kV is adopted with a variable shaped beam exposure method. Further, EB proximity correction hardware using a pattern area density map, which is the same as that of HL-800D, has been adopted for the improvement of pattern width linearity. In the mechanical system, continuously moving stage, three axis active vibration-isolation and three-point mask supporting are used to improve positioning accuracy and stitching accuracy. In addition, a new mask handling system using a robot realizes full-automatic mask loading. The results of CD uniformity for 1 .tm line pattern are better than 0.025 μm(3σ) and pattern linearity is within ± 0.03 μm. Positioning overlay accuracy among three masks is 0.038 μm(3σ). In addition, a stitching accuracy of 0.037 μm(mean + 3δ) is obtained.

Citation Download Citation

Kazui Mizuno, Katsuhiro Kawasaki, Hiroyuki Itoh, Hidetoshi Satoh, Yasuhiro Someda, and Norio Saitou "Electron-beam mask writing system for 0.25-μm device generation", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245235

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