Paper
23 September 1996 Eutectic bonds on wafer scale by thin film multilayers
Carsten Christensen, Siebe Bouwstra
Author Affiliations +
Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251228
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
The use of gold based thin film multilayer systems for forming eutectic bonds on wafer scale is investigated and preliminary results will be presented. On polished 4 inch wafers different multilayer systems are developed using thin film techniques and bonded afterwards under reactive atmospheres and different bonding temperatures and forces. Pull tests are performed to extract the bonding strengths.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carsten Christensen and Siebe Bouwstra "Eutectic bonds on wafer scale by thin film multilayers", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251228
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Gold

Multilayers

Thin films

Chromium

Nitrogen

Tin

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