Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry

Carlos L. Ygartua; Kathy Konjuh; Shari Schuchmann; Kenneth P. MacWilliams; David Mordo

doi:10.1117/12.275953

7 July 1997 Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry

Carlos L. Ygartua, Kathy Konjuh, Shari Schuchmann, Kenneth P. MacWilliams, David Mordo

Author Affiliations +

Proceedings Volume 3050, Metrology, Inspection, and Process Control for Microlithography XI; (1997) https://doi.org/10.1117/12.275953
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Processes for PECVD SiON Anti-Reflective Layer (ARL) films are currently being developed for application of DUV lithography. The shorter wavelength allows for higher pattern resolution. Anti-reflective films are needed to reduce thin film interference effects and reflective notching, which limit the control of critical dimension (CD) variations. The refractive index (n) and extinction coefficient (k) at the exposure wavelength, in addition to the film thickness (t), are needed to predict the film's anti-reflective property. Broadband ultra-violet spectroscopic ellipsometry (SE) is uniquely capable of directly measuring the refractive index dispersion and thickness of single layer thin films, especially in the critical UV region. The refractive index (RI) dispersion is physically determined by the compositional characteristics of the film. This paper evaluates the robustness of various RI dispersion models in relation to the compositional variations of the SiON films. The n and k values are correlated with the SiON stoichiometry, including hydrogen concentration from Rutherford Backscattering Spectrometry measurements. Moreover, it is found that the UV RI's are better able to track small stoichiometry variations than conventional RI at 633 nm.

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Carlos L. Ygartua, Kathy Konjuh, Shari Schuchmann, Kenneth P. MacWilliams, and David Mordo "Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); https://doi.org/10.1117/12.275953

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