X-Ray Lithography: Fabrication Of Masks And Very Large Scale Integrated (VLSI) Devices

B. B. Triplett; S. Jones

doi:10.1117/12.933422

30 June 1982 X-Ray Lithography: Fabrication Of Masks And Very Large Scale Integrated (VLSI) Devices

B. B. Triplett, S. Jones

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933422
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

Recent advances in x-ray lithography show that accurate, low defect replication of submicron features is becoming a reality. However, before x-ray lithography can be implemented in production several difficult issues must be resolved. In particular, x-ray masks must be fabricated on thin membranes with low defect density and high dimensional stability. The Intel Magnetics one megabit bubble memory is an ideal initial evaluation device because of the high resolution required (1.2 μm minimum feature size) together with its defect and alignment tolerance. Data is presented on one megabit bubble memories fabricated with the trilevel resist scheme using the commercially available resist Sel-N, Type A (exposure time is typically 2 minutes with the Perkin-Elmer 10kW tungsten x-ray exposure system). Distortion and defect data is presented showing our learning experience in fabricating x-ray masks with MEBES. Masks with sufficient stability to start LSI silicon device evaluation have been available for more than a year, masks with sufficiently low defect density to start evaluation of such devices are projected to be available in 1982. Radiation sensitive LSI devices have been exposed to lithographic levels of x-ray flux while undergoing otherwise conventional fabrication. Test data showing no performance degradation in these devices is reviewed.

Citation Download Citation

B. B. Triplett and S. Jones "X-Ray Lithography: Fabrication Of Masks And Very Large Scale Integrated (VLSI) Devices", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933422

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