Paper
27 April 1999 Characterization of 3D resist patterns by means of optical scatterometry
Joerg Bischoff, Lutz Hutschenreuther, Horst Truckenbrodt, A. Bauer, Ulrich Haak, T. Skaloud
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Abstract
We report about our first attempts to apply optical scatterometry to the characterization of 3D resist patterns. Particularly, nominal quarter micron dots and holes are investigated having a pitch of a half micron in both directions. The specular reflected light versus the incidence angle shows significant variance with changing exposure dose and thus with changing dot or hole diameter, respectively. Scanning electron micrographs serve as an assisting tool for the characterization of the developed resist pattern. Additionally, an algorithm for the rigorous modeling of diffraction from regular 3D-patterns is sketched. In some cases, the match between experiment and theory is already quite satisfying. This might be improved by more refined profile adaption and enhanced computer power.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joerg Bischoff, Lutz Hutschenreuther, Horst Truckenbrodt, A. Bauer, Ulrich Haak, and T. Skaloud "Characterization of 3D resist patterns by means of optical scatterometry", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346936
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Cited by 4 scholarly publications.
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KEYWORDS
Diffraction

Polarization

Scatterometry

Photomicroscopy

Matrices

3D modeling

Specular reflections

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