Paper
21 July 2000 EUV engineering test stand
Daniel A. Tichenor, Glenn D. Kubiak, William C. Replogle, Leonard E. Klebanoff, John B. Wronosky, Layton C. Hale, Henry N. Chapman, John S. Taylor, James A. Folta, Claude Montcalm, Russell M. Hudyma, Kenneth A. Goldberg, Patrick P. Naulleau
Author Affiliations +
Abstract
The Engineering Test Stand (ETS) is an EUV laboratory lithography tool. The purpose of the ETS is to demonstrate EUV full-field imaging and provide data required to support production-tool development. The ETS is configured to separate the imaging system and stages from the illumination system. Environmental conditions can be controlled independently in the two modules to maximize EUV throughput and environmental control. A source of 13.4 nm radiation is provided by a laser plasma source in which a YAG laser beam is focused onto a xenon-cluster target. A condenser system, comprised of multilayer-coated mirrors and grazing-incidence mirrors, collects the EUV radiation and directs it onto a reflecting reticle. A four-mirror, ring-field optical system, having a numerical aperture of 0.1, projects a 4x-reduction image onto the wafer plane. This design corresponds to a resolution of 70 nm at a k1 of 0.52. The ETS is designed to produce full- field images in step-and-scan mode using vacuum-compatible, one-dimension-long-travel magnetically levitated stages for both reticle and wafer. Reticle protection is incorporated into the ETS design. This paper provides a system overview of the ETS design and specifications.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel A. Tichenor, Glenn D. Kubiak, William C. Replogle, Leonard E. Klebanoff, John B. Wronosky, Layton C. Hale, Henry N. Chapman, John S. Taylor, James A. Folta, Claude Montcalm, Russell M. Hudyma, Kenneth A. Goldberg, and Patrick P. Naulleau "EUV engineering test stand", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390083
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Cited by 34 scholarly publications.
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KEYWORDS
Extreme ultraviolet

Reticles

Projection systems

Mirrors

Semiconducting wafers

Distortion

Optical alignment

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