Nikon EB stepper: its system concept and countermeasures for critical issues

Kazuaki Suzuki; Tomoharu Fujiwara; Kazunari Hada; Noriyuki Hirayanagi; Shintaro Kawata; Kenji Morita; Kazuya Okamoto; Teruaki Okino; Sumito Shimizu; Takehisa Yahiro

doi:10.1117/12.390057

21 July 2000 Nikon EB stepper: its system concept and countermeasures for critical issues

Kazuaki Suzuki, Tomoharu Fujiwara, Kazunari Hada, Noriyuki Hirayanagi, Shintaro Kawata, Kenji Morita, Kazuya Okamoto, Teruaki Okino, Sumito Shimizu, Takehisa Yahiro

Author Affiliations +

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390057
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The imaging concept of electron projection lithography (EPL) with silicon stencil reticle is explained. A silicon membrane thickness of 1 - 4 micrometer is suitable for the reticle. A scattering contrast of greater than 99% is expected. Nikon EB stepper's dynamic writing strategy of discrete exposure on a sub-field by sub-field basis with deflection control of the electron beam is explained. The basic system configuration of EB stepper is introduced. Examples of error budget for CD variation and Overlay/Stitching are shown. Nikon's policy for countermeasures for critical issues such as proximity effect correction, sub-field/complementary stitching and wafer heating influence are explained. For extensibility down to 70 nm and below, both exposure tool and reticle should be improved.

Citation Download Citation

Kazuaki Suzuki, Tomoharu Fujiwara, Kazunari Hada, Noriyuki Hirayanagi, Shintaro Kawata, Kenji Morita, Kazuya Okamoto, Teruaki Okino, Sumito Shimizu, and Takehisa Yahiro "Nikon EB stepper: its system concept and countermeasures for critical issues", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390057

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