Paper
19 July 2000 Evaluation of loading effect of NLD dry etching
Takayuki Iwamatsu, Tatsuya Fujisawa, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana
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Abstract
Recently, loading effect is becoming a great issue in mask dry etching process. It is well known that the effect is affected by pattern density. To improve the issue, an advanced mask dry etching system using neutral loop discharge was applied for next generation mask fabrication, because the tool make is possible to get high plasma density and low gas pressure.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Iwamatsu, Tatsuya Fujisawa, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, and Yoichi Takehana "Evaluation of loading effect of NLD dry etching", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392060
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Cited by 3 scholarly publications.
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KEYWORDS
Etching

Dry etching

Photomasks

Critical dimension metrology

Scanning electron microscopy

Chromium

Mask making

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