La-implanted Si-based emitting film materials

Meiling Yuan; Qingnian Wang; Yuxin Zeng; Shuifeng Wang; Fei Xu; Guoan Cheng

doi:10.1117/12.401793

5 October 2000 La-implanted Si-based emitting film materials

Meiling Yuan, Qingnian Wang, Yuxin Zeng, Shuifeng Wang, Fei Xu, Guoan Cheng

Proceedings Volume 4223, Instruments for Optics and Optoelectronic Inspection and Control; (2000) https://doi.org/10.1117/12.401793
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer thermal oxide Si samples doped by La ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the UV light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of La ion dose during ion beam synthesis within a certain limits. Moreover, PL is closely related to the temperature of rapid thermal annealing. Besides, the feature and appearance of the samples was surveyed, with atomic force microscopy. The photoluminescence mechanisms for our samples is also discussed.

Citation Download Citation

Meiling Yuan, Qingnian Wang, Yuxin Zeng, Shuifeng Wang, Fei Xu, and Guoan Cheng "La-implanted Si-based emitting film materials", Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); https://doi.org/10.1117/12.401793

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