Paper
30 July 2002 Flare and its impact on low-k1 KrF and ArF lithography
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Abstract
We present a complete method for the characterization and modeling of flare based on the measurement of the modulation transfer function (MTF) of scanners. A point-spread function (PSFscat) representing only the scattered light or flare in the tool is inferred by comparing the measured MTF with a calculated MTF for aberration-free imaging. This PSFscat is then used to predict the effect of flare for different layouts. In particular, local variations in pattern density are shown to couple with mid- and short-range flare and lead to significant CD non-uniformity across the field. Finally, we examine double exposure techniques that are sensitive to flare because of the total light reaching the wafer, from the two masking steps.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno M. La Fontaine, Mircea V. Dusa, Alden Acheta, Cinti Chen, Anatoly Bourov, Harry J. Levinson, Lloyd C. Litt, Melchior Mulder, Rolf Seltman, and Judith van Praagh "Flare and its impact on low-k1 KrF and ArF lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474598
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CITATIONS
Cited by 13 scholarly publications.
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KEYWORDS
Modulation transfer functions

Point spread functions

Spatial frequencies

Photomasks

Modulation

Scanners

Lithography

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