RF MEMS phase shifter by microstereolithography on silicon

Taeksoo Ji; K. J. Vinoy; Vijay K. Varadan

doi:10.1117/12.475017

11 July 2002 RF MEMS phase shifter by microstereolithography on silicon

Taeksoo Ji, K. J. Vinoy, Vijay K. Varadan

Proceedings Volume 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology; (2002) https://doi.org/10.1117/12.475017
Event: SPIE's 9th Annual International Symposium on Smart Structures and Materials, 2002, San Diego, California, United States

Abstract

Fabrication process and numerical simulations of a distributed MEMS phase shifter fabricated on a high resistivity silicon substrate using microstereolithography technique is presented here. This fabrication technique enables reduction of the early development cost by removing the need for photomasks used for defining the MEMS bridges. The distributed MEMS phase shifter consists of a high- impedance coplanar waveguide transmission line and several MEMS bridges of 4.5 micrometers height. By applying an electrostatic voltage the height of these bridges can be adjusted. This result in a variation in the distributed capacitance of the segment of the transmission line, which manifests in the phase shift at the output terminal. Experimental efforts to improve its performance is presently underway. The fabrication procedure described here shows significant promise for the use of microstereolithography techniques for RF MEMS devices. Furthermore, the present derive is built on silicon substrate, and hence is compatible with conventional IC fabrication processes.

Citation Download Citation

Taeksoo Ji, K. J. Vinoy, and Vijay K. Varadan "RF MEMS phase shifter by microstereolithography on silicon", Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); https://doi.org/10.1117/12.475017

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