Paper
2 April 2004 Anodic bond characteristics of Si-wafer and MLCA using Pyrex #7740 glass intermediate layer
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Abstract
This paper describes anodic bonding characteristics of MLCA to Si-wafer using evaporated Pyres #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with the same properties that were deposited on MLCA under optimum RF magneto conditions (Ar 100%, input power 1 W/cm2). After annealing in 450°C for 1 hr, the anodic bonding of MLCA and Si-wafer was successfully performed at 600 V, 400°C in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation and simulation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity being 0.05-0.08 %FS. Moreover, any damages or separation of MLCA/Si bonded interfaces did not occur during actuation test. Therefore, it is expected that the anodic bonding technology of MLCA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.
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Gwiy-Sang Chung and Jae-min Kim "Anodic bond characteristics of Si-wafer and MLCA using Pyrex #7740 glass intermediate layer", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.522858
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KEYWORDS
Glasses

Silicon

Thin films

Microelectromechanical systems

Sputter deposition

Thin film deposition

Argon

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