Progress in the ASML EUV program

Hans Meiling; Vadim Banine; Peter Kuerz; Noreen Harned

doi:10.1117/12.534784

20 May 2004 Progress in the ASML EUV program

Hans Meiling, Vadim Banine, Peter Kuerz, Noreen Harned

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.534784
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

ASML has continued to make significant investments in the development of extreme ultraviolet lithography (EUVL), addressing the critical challenges, including defect-free mask handling, reflective optics technology, environmental control, and source. We present updates in these key areas and in the realization of our process development exposure tool. This tool is used to minimize the risk of EUVL for the 45-nm technology node and below, and to support the development of the global infrastructure of masks, sources, and resist. Realization of the process development tool is well underway; most of the modules are in vacuum qualification and functional testing. From arial image simulations, we conclude that EUVL tools are particularly suited for contact printing, due to the use of dark-field masks, and hence, limited influence of flare.

Citation Download Citation

Hans Meiling, Vadim Banine, Peter Kuerz, and Noreen Harned "Progress in the ASML EUV program", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.534784

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