Paper
20 August 2004 Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024
Mathias Irmscher, Dirk Beyer, Joerg Butschke, Peter Hudek, Corinna Koepernik, Jason Plumhoff, Emmanuel Rausa, Mitsuru Sato, Peter Voehringer
Author Affiliations +
Abstract
Optimized process parameters using the TOK OEBR-CAN024 resist for high chrome load patterning have been determined. A tight linearity tolerance for opaque and clear features, independent on the local pattern density, was the goal of our process integration work. For this purpose we evaluated a new correction method taking into account electron scattering and process influences. The method is based on matching of measured pattern geometry by iterative back-simulation using multiple Gauss and/or exponential functions. The obtained control function acts as input for the proximity correction software PROXECCO. Approaches with different pattern oversize and two Cr thicknesses were accomplished and the results have been reported. Isolated opaque and clear lines could be realized in a very tight linearity range. The increasing line width of small dense lines, induced by the etching process, could be corrected only partially.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mathias Irmscher, Dirk Beyer, Joerg Butschke, Peter Hudek, Corinna Koepernik, Jason Plumhoff, Emmanuel Rausa, Mitsuru Sato, and Peter Voehringer "Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557686
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Opacity

Photoresist processing

Chromium

Scattering

Electron beam lithography

Optical lithography

Back to Top