Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer

Eui-Sang Park; Hyun-Joon Cho; Jin-Min Kim; Sang-Soo Choi

doi:10.1117/12.599855

12 May 2005 Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer

Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, Sang-Soo Choi

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.599855
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.

Citation Download Citation

Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, and Sang-Soo Choi "Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.599855

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