Mr. Eui-Sang Park Profile

Eui-Sang Park

Assistant Manager at Photronics Inc

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Author

Publications (10)

Proceedings Article | 28 June 2005 Paper

A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node

Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617065

KEYWORDS: Beam shaping, Critical dimension metrology, Vestigial sideband modulation, Electrons, Backscatter, Cadmium, Error analysis, Photoresist processing, Modulation, Computer simulations

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Proceedings Article | 12 May 2005 Paper

Improving lithography CD control by correcting proximity and long range variations in electron beam mask writer

Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599855

KEYWORDS: Critical dimension metrology, Electron beams, Lithography, Photomasks, Vestigial sideband modulation, Backscatter, Cadmium, Electron beam lithography, Beam shaping, Error analysis

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Proceedings Article | 17 December 2003 Paper

Comparative evaluation of mask cleaning performance

Woo-Gun Jeong, Dong-il Park, Eui-Sang Park, Young-Woong Cho, Se-Jong Choi, Hyuk-Joo Kwon, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518030

KEYWORDS: Particles, Deep ultraviolet, Photomasks, Industrial chemicals, Ultraviolet radiation, Scanning probe microscopy, Transmittance, Reticles, Oxygen, Mask cleaning

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Proceedings Article | 28 August 2003 Paper

Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production

Woo-Gun Jeong, Dong-Il Park, Eui-Sang Park, Sun-Kyu Seo, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504184

KEYWORDS: Critical dimension metrology, Photomasks, Chromium, Platinum, Opacity, Vestigial sideband modulation, Chemically amplified resists, Inspection, Polymers, Control systems

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Proceedings Article | 28 August 2003 Paper

A study of post-exposure baking effect for CAR process in photomask fabrication

Dong-Il Park, Sun-Kyu Seo, Woo-Gun Jeong, Eui-Sang Park, Jong-Hwa Lee, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504187

KEYWORDS: Line edge roughness, Photomasks, Photoresist processing, Chemically amplified resists, Critical dimension metrology, Logic, Logic devices, Lithography, Temperature metrology, Arsenic

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Proceedings Article | 28 August 2003 Paper

The feasibility study of thin Cr film for low process bias

Woong-Won Seo, Si-Yeul Yoon, Dong-Il Park, Eui-Sang Park, Jin-Min Kim, Sung-Mo Jeong, Sang-Soo Choi, Han-Sun Cha, K. Nam

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504181

KEYWORDS: Chromium, Etching, Critical dimension metrology, Photomasks, Dry etching, Backscatter, Thin films, Mask making, Electron beams, Equipment and services

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Proceedings Article | 28 August 2003 Paper

Modeling and correction of global CD uniformity caused by fogging and loading effects in 90-nm-node CAR process

Dong-Il Park, Eui-Sang Park, Jong-Hwa Lee, Woo-Gun Jeong, Sun-Kyu Seo, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504051

KEYWORDS: Critical dimension metrology, Cadmium, Error analysis, Etching, Photomasks, Convolution, Dry etching, Data modeling, Chromium, Chemically amplified resists

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Proceedings Article | 27 December 2002 Paper

90-nm-node CD uniformity improvement using a controlled gradient temperature CAR PEB process

Dong-Il Park, Soon-Kyu Seo, Eu-Sang Park, Jong-Hwa Lee, Woo-Gun Jeong, Jin-Min Kim, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467905

KEYWORDS: Chemically amplified resists, Photoresist processing, Photomasks, Chromium, Etching, Dry etching, Cadmium, Critical dimension metrology, Photoresist developing, Mask making

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Proceedings Article | 27 December 2002 Paper

Comparative evaluation of mask production CAR development processes with stepwise defect inspection

Woo-Gun Jeong, Jung-Kwan Lee, Dong-Il Park, Eu-Sang Park, Jong-Hwa Lee, Sun-Kyu Seo, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467908

KEYWORDS: Inspection, Etching, Photomasks, Photoresist processing, Scanning electron microscopy, Binary data, Dry etching, Defect inspection, Fluctuations and noise, Defect detection

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Chemically amplified resist (CAR) provides superior lithographic performance compared to traditional e-beam resists in production maskmaking. Parameters benefiting the most are contrast, resolution, and sensitivity. In spite of CAR's advantages, defect control and tighter 50KeV e-beam CAR process restrictions are significantly more critical thanks to smaller geometries, tighter CD specifications, and optical proximity correction (OPC) for 90nm node mask technology. Among defect root causes, resist development is considered to be the one of the most important steps because post-development residue can generate printable defects on finished masks. We investigated the CAR development process across different resist development methods, such as binary and fan-type nozzle spin spray, and puddle development. Several high density binary and embedded-attenuated phase shift masks (EAPSMs) with 70% clear area in the main pattern field were evaluated in an effort to identify and contain post-develop defects in a typical mask production flow. Development step process residue was examined at the after-develop inspection (ADI) step and scanning electron microscopy (SEM) was used for individual defect review. The KLA-Tencor SLF77 TeraStar inspection tool was used to inspect patterns after the development, Cr/MoSiON layer dry etch, and clean steps. The effectiveness of the various CAR development methods has been also studied following development, dry etch, and cleaning inspection by using identical binary and EAPSM masks from production. The mechanism and defect source during the stepwise process and inspections were scrutinized and discussed. Experimental results showed that stepwise process inspection was effective in identifying defects and their sources to prevent defects, and in optimizing each process step. It was found that CAR development and dry etch processes are the most important process steps to control defects in CAR-based mask production. Suggested optimized develop process parameters for 90nm-node mask

Proceedings Article | 27 December 2002 Paper

Optimum PEC conditions under resist heating effect reduction for 90-nm-node mask writing

Eu Sang Park, Jong Hwa Lee, Dong Il Park, Woo Gun Jeong, Soon Kyu Seo, Jin Min Kim, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467899

KEYWORDS: Critical dimension metrology, Backscatter, Cadmium, Dry etching, Etching, Gases, Photomasks, Scanning electron microscopy, Chlorine, Sun

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Showing 5 of 10 publications

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