Influence of thermodiffusion parameters on the concentration profiles

Valery I. Rudakov; Vladimir V. Ovcharov

doi:10.1117/12.681764

10 June 2006 Influence of thermodiffusion parameters on the concentration profiles

Valery I. Rudakov, Vladimir V. Ovcharov

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600R (2006) https://doi.org/10.1117/12.681764
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The research of influence of the thermodiffusion parameters -temperature gradient ∇T and heat of transport Q* on concentration profiles is carried out for diffusion from an instantaneous plane source and an extended source of infinite extent. The estimations of heats of transport of the P and B in silicon are made at nonisothermal annealing. The obtained results correspond to theoretical estimations and give meanings ofheat oftransport ~10³ eV.

Citation Download Citation

Valery I. Rudakov and Vladimir V. Ovcharov "Influence of thermodiffusion parameters on the concentration profiles", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600R (10 June 2006); https://doi.org/10.1117/12.681764

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