Simulation of RTD with the use of one- and two-band combined models

I. I. Abramov; I. A. Goncharenko; N. V. Kolomejtseva

doi:10.1117/12.683557

10 June 2006 Simulation of RTD with the use of one- and two-band combined models

I. I. Abramov, I. A. Goncharenko, N. V. Kolomejtseva

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601S (2006) https://doi.org/10.1117/12.683557
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The results of physical process simulations for different structures of resonant-tunneling diode (RTD) are described in the paper. One-band [1,2] and two-band combined numerical models of RTD are involved in investigation. Two coupled Schodinger equations are solved in two-band combined model. It allows to consider Γ-X intervalley scattering influence on electron transport in RTD. The developed one- and two-band models permits to take into account of charge influence in different regions of device, including surface charge, classical and quantum-mechanical regions interaction, shape of energy-band offset on heterojunctions, other scattering mechanisms, resistances of near-contact regions. The models allow to simulate RTD with arbitrary number of barriers and calculate have functions, charge and potential distributions, transmission and IV- characteristics depending on different material parameters and structure design. The proposed models have been included in numerical simulation subsystem NS-RTS-NANODEV, which is a part of nanoelectronic device system NANODEV. In the paper the comparison of simulation results carried out with the use of proposed one- and two-band combined models of RTD are presented. It allows to verify significance of Γ-X intervalley scattering for some material systems in a number of cases.

Citation Download Citation

I. I. Abramov, I. A. Goncharenko, and N. V. Kolomejtseva "Simulation of RTD with the use of one- and two-band combined models", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601S (10 June 2006); https://doi.org/10.1117/12.683557

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