Lasing characteristics of 1.3-um atomic layer epitaxy quamtum dot laser diode

Kwang Woong Kim; Nam Ki Cho; Jin Dong Song; Won Jun Choi; Jung Il Lee; Jung Ho Park

doi:10.1117/12.691596

6 October 2006 Lasing characteristics of 1.3-μm atomic layer epitaxy quamtum dot laser diode

Kwang Woong Kim, Nam Ki Cho, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung Ho Park

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63522G (2006) https://doi.org/10.1117/12.691596
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In_0.15Ga_0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm² under a pulsed operation and 247 A/cm² under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.

Citation Download Citation

Kwang Woong Kim, Nam Ki Cho, Jin Dong Song, Won Jun Choi, Jung Il Lee, and Jung Ho Park "Lasing characteristics of 1.3-μm atomic layer epitaxy quamtum dot laser diode", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63522G (6 October 2006); https://doi.org/10.1117/12.691596

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