Paper
22 January 2007 Fabrication and characterization of SiO2 microcantilever for high sensitive moisture sensor
Qi Chen, Ji Fang, Hai-Feng Ji, Kody Varahraman
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Abstract
μThis paper reports a novel design of SiO2 microcantilever for high sensitivity sensor platform. In order to fabricate this device, a new fabrication process using isotropic combined with anisotropic dry etching to release the SiO2 microcantilever beam by ICP (Inductively Coupled Plasma) was developed and investigated. This new process not only obtains a high etch rate at 9.1 &mgr;m per minute, but also provides a good profile controllability, and a flexibility of device design. To compare the SiO2 and Si cantilever beam, the results of simulation and theoretical analysis are given. The results predict the SiO2 cantilever can achieve a higher sensitivity than the Si cantilever. The SiO2 cantilever beams with 1 &mgr;m thickness, 100 &mgr;m width, and 250 &mgr;m length were fabricated and tested by exposing it to aminoethanethiol solution of low concentration. The experimental data support the prediction derived from the simulation results. The moisture sensor based on the surface modified cantilever beam showed a good response to one percentage relative humidity.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi Chen, Ji Fang, Hai-Feng Ji, and Kody Varahraman "Fabrication and characterization of SiO2 microcantilever for high sensitive moisture sensor", Proc. SPIE 6465, Microfluidics, BioMEMS, and Medical Microsystems V, 64650H (22 January 2007); https://doi.org/10.1117/12.705954
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KEYWORDS
Silicon

Etching

Sensors

Semiconducting wafers

Photoresist materials

Photomasks

Anisotropic etching

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