Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates

Ya. I. Alivov; F. Agra; B. Xiao; S. Chevtchenko; C. Litton; H. Morkoç

doi:10.1117/12.706506

20 February 2007 Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates

Ya. I. Alivov, F. Agra, B. Xiao, S. Chevtchenko, C. Litton, H. Morkoç

Author Affiliations +

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64741B (2007) https://doi.org/10.1117/12.706506
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Lead zirconate titanate PbZr₅₂Ti₄₈O₃ (PZT) layers were deposited on ZnO layers by rf-sputtering at varying substrate temperatures. The effect of annealing on PZT crystal properties has been studied by X-ray diffraction and atomic force microscopy. It is shown that the annealing in oxygen ambient has significant effect on the quality of the deposited PZT layers. The optimum growth temperature has been found to be 650 C.

Citation Download Citation

Ya. I. Alivov, F. Agra, B. Xiao, S. Chevtchenko, C. Litton, and H. Morkoç "Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741B (20 February 2007); https://doi.org/10.1117/12.706506

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