Paper
5 April 2007 Image analysis of alignment and overlay marks with compound structure
Author Affiliations +
Abstract
Decreasing of node size significantly increases requirement to overlay precision. Complex structure of target demands using of compound structures of overlay mark, which usually contain features with acute sidewall angles, coated by several layers. In this paper the possibility and limitations of image-based overlay with compound structures with overlay mark and coating layers are analyzed in detail. Dependence of overlay signal shape on overlay offset is considered. Structures with asymmetric sidewall angle, non-uniform thicknesses of layers and curved shape of layer borders are examined. Influence of thickness variation, difference between left and right sidewall angles of asymmetric shape and curvature of layer borders are investigated. For the simulation of such complex structures of overlay marks, our in-house simulator based on rigorous coupled-wave analysis (RCWA) module is used. Maximum allowed values of these parameters are studied in order to determine the limitations of image-based overlay. Results of this consideration can be used for improvement of overlay precision and elaboration of optimal overlay strategy in conditions of node shrinking in the semiconductor industry.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Chalykh, Irina Pundaleva, Jang-Ho Shin, Seong-Sue Kim, Han-Ku Cho, and Joo-Tae Moon "Image analysis of alignment and overlay marks with compound structure", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182D (5 April 2007); https://doi.org/10.1117/12.711277
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Cited by 1 scholarly publication.
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KEYWORDS
Overlay metrology

Optical alignment

Antireflective coatings

Image analysis

Coating

Image quality

Semiconductors

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