Dr. Han-Ku Cho Profile

Dr. Han-Ku Cho

Director at ASML Korea Co Ltd

SPIE Involvement:

Author

Publications (149)

Proceedings Article | 20 September 2013 Paper

Study of ion beam damage in magnetic tunnel junction on FIB prepared samples

Kwangho Park, Cheolwoong Yang, Kyuchul Kim, Dongwoo Nam, Kyuman Hwang, Junsoo Bae, Juhyeon Ahn, Jin Choi, Soonoh Park, Sangsup Jeong, Hanku Cho, Eunseung Jeong

Proceedings Volume 8819, 88190I (2013) https://doi.org/10.1117/12.2026767

KEYWORDS: Ion beams, Ions, Magnetism, Transmission electron microscopy, Silicon, Oxides, Semiconducting wafers, Resistance, Gallium, Ferromagnetics

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Proceedings Article | 9 September 2013 Paper

Mask automation: need a revolution in mask makers and equipment industry

Seong-yong Moon, Sang-yong Yu, Young-hwa Noh, Ki-jung Son, Hyun-Joo Lee, Han-Ku Cho

Proceedings Volume 8880, 888016 (2013) https://doi.org/10.1117/12.2025569

KEYWORDS: Photomasks, Manufacturing, Control systems, Process control, Semiconductors, Semiconducting wafers, Telecommunications, Wafer manufacturing, Mask making, Extreme ultraviolet

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Proceedings Article | 8 November 2012 Paper

Study for compensation of unexpected image placement error caused by VSB mask writer deflector

Hyun-joo Lee, Min-kyu Choi, Seong-yong Moon, Han-Ku Cho, Jonggul Doh, Jinho Ahn

Proceedings Volume 8522, 852228 (2012) https://doi.org/10.1117/12.964098

KEYWORDS: Vestigial sideband modulation, Photomasks, Associative arrays, Contamination, Electron beams, Beam shaping, Reliability, Calibration, Data modeling, Semiconductors

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Proceedings Article | 14 October 2011 Paper

EUVL mask inspection using 193nm wavelength for 30nm node and beyond

Jihoon Na, Wonil Cho, Tae-Geun Kim, In-Yong Kang, Byungcheol Cha, Inkyun Shin, Han-Ku Cho

Proceedings Volume 8166, 81661H (2011) https://doi.org/10.1117/12.898896

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Modulation, Defect detection, Scanning electron microscopy, Scanners, Reflectivity, Wafer-level optics

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Proceedings Article | 14 October 2011 Paper

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

Sang Hee Lee, Jin Choi, Hee Bom Kim, Byung Gook Kim, Han-Ku Cho

Proceedings Volume 8166, 81661B (2011) https://doi.org/10.1117/12.896977

KEYWORDS: Photomasks, Error analysis, Line edge roughness, Vestigial sideband modulation, Critical dimension metrology, Electron beam lithography, Inspection, Mask making, Image registration, Calibration

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Proceedings Article | 14 October 2011 Paper

Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction

Jin Choi, Suk Jong Bae, Hee Bom Kim, B. G. Kim, Han Ku Cho

Proceedings Volume 8166, 81661Z (2011) https://doi.org/10.1117/12.898856

KEYWORDS: Photomasks, Extreme ultraviolet, Scattering, Critical dimension metrology, Monte Carlo methods, Lithography, Electron beam lithography, Semiconducting wafers, Double patterning technology, Astatine

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Proceedings Article | 8 April 2011 Paper

Availability of underlayer application to EUV process

Hitoshi Kosugi, Carlos Fonseca, Fumiko Iwao, Hiroshi Marumoto, Hyun-Woo Kim, Kyoungyong Cho, Cheol-Hong Park, Chang-Min Park, Hai-Sub Na, Cha-Won Koh, Hanku Cho

Proceedings Volume 7969, 79692E (2011) https://doi.org/10.1117/12.878730

KEYWORDS: Coating, Semiconducting wafers, Contamination, Extreme ultraviolet, Data modeling, Calibration, Extreme ultraviolet lithography, Scanning electron microscopy, Etching, Thin films

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Proceedings Article | 7 April 2011 Paper

CD uniformity improvement for EUV resists process: EUV resolution enhancement layer

Hyun-Woo Kim, Hai-Sub Na, Chang-Min Park, Cheolhong Park, Sumin Kim, Chawon Koh, In-Sung Kim, Han-Ku Cho

Proceedings Volume 7969, 796916 (2011) https://doi.org/10.1117/12.879791

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Deep ultraviolet, Reflectivity, Extreme ultraviolet lithography, Line width roughness, Photoresist processing, Resolution enhancement technologies, Photomasks, Plasma

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Proceedings Article | 2 April 2011 Paper

Current status of EUV mask inspection using 193nm optical inspection system in 30nm node and beyond

Sang Hoon Han, Jihoon Na, Wonil Cho, Dong Hoon Chung, Chan-Uk Jeon, HanKu Cho, Dana Bernstein, Eun Young Park, Anoop Sreenath, Shmoolik Mangan

Proceedings Volume 7985, 79850V (2011) https://doi.org/10.1117/12.895209

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Signal to noise ratio, Optical inspection, Lithography, Scanners, Manufacturing, Semiconducting wafers

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Proceedings Article | 26 March 2011 Paper

Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application

Sungmin Huh, In-Yong Kang, Sang-Hyun Kim, Hwan-seok Seo, Dongwan Kim, Jooon Park, Seong-Sue Kim, Han-Ku Cho, Kenneth Goldberg, Iacopo Mochi, Tsutomu Shoki, Gregg Inderhees

Proceedings Volume 7969, 796902 (2011) https://doi.org/10.1117/12.879384

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Wafer inspection, Semiconducting wafers, Defect detection, Defect inspection, Extreme ultraviolet lithography, Manufacturing, Particles

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Proceedings Article | 25 September 2010 Paper

An analysis of correlation between scanning direction and defect detection at ultra high resolution

Kwon Lim, SungPil Choi, Wonil Cho, Dong Hoon Chung, Chan-Uk Jeon, HanKu Cho

Proceedings Volume 7823, 782334 (2010) https://doi.org/10.1117/12.866017

KEYWORDS: Inspection, Photomasks, Sensors, Extreme ultraviolet lithography, Image processing, Defect detection, Image quality, Image sensors, Extreme ultraviolet, Semiconducting wafers

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Proceedings Article | 25 September 2010 Paper

Plasma monitoring of chrome dry etching for mask making

Sung-Won Kwon, Dong-Chan Kim, Dong-Seok Nam, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7823, 78230F (2010) https://doi.org/10.1117/12.866828

KEYWORDS: Etching, Chromium, Plasma, Photomasks, Plasma etching, Oxygen, Chlorine, Dry etching, Emission spectroscopy, Mask making

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Proceedings Article | 25 September 2010 Paper

Damage/organic free ozonated DI water cleaning on EUVL Ru capping layer

Seung-ho Lee, Bong-kyun Kang, Hyuk-min Kim, Min-soo Kim, Han-ku Cho, Chan-uk Jeon, Hyung-ho Ko, Han-shin Lee, Jin-ho Ahn, Jin-Goo Park

Proceedings Volume 7823, 78232Z (2010) https://doi.org/10.1117/12.878895

KEYWORDS: Ruthenium, Ozone, Extreme ultraviolet lithography, Oxygen, Gases, Carbon dioxide, Carbon, Scanning probe microscopy, Lithography, Atomic force microscopy

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Proceedings Article | 25 September 2010 Paper

Degradation of pattern quality due to strong electron scattering in EUV mask

Jin Choi, Rae Won Lee, Sang Hee Lee, Byung Sup Ahn, Hee Bom Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7823, 78230D (2010) https://doi.org/10.1117/12.864212

KEYWORDS: Photomasks, Extreme ultraviolet, Scattering, Monte Carlo methods, Ray tracing, Electron beam lithography, Molybdenum, Metals, Ion beams, Laser scattering

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Proceedings Article | 27 May 2010 Paper

The optical CD metrology for EUV mask

Jin-Back Park, Kyoung-Yoon Bang, Dong-Gun Lee, Hae-Young Jeong, Seung-Soo Kim, Han-Ku Cho

Proceedings Volume 7748, 77481X (2010) https://doi.org/10.1117/12.868293

KEYWORDS: Extreme ultraviolet, Photomasks, Ruthenium, Data modeling, Etching, Atomic force microscopy, EUV optics, Silicon, Scanning electron microscopy, Critical dimension metrology

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Proceedings Article | 27 May 2010 Paper

Requirements of e-beam size and position accuracy for photomask of sub-32 nm HP device

Jin Choi, Sang Hee Lee, Hee Bom Kim, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7748, 774819 (2010) https://doi.org/10.1117/12.868174

KEYWORDS: Photomasks, Critical dimension metrology, Electron beams, Lithography, Line edge roughness, Vestigial sideband modulation, Electron beam lithography, Optical proximity correction, Computational lithography, Extreme ultraviolet lithography

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Proceedings Article | 26 May 2010 Paper

Effect of EUV exposure upon surface residual chemicals on EUV mask surface

Han-Shin Lee, Jaehyuck Choi, DonGun Lee, Hyungho Ko, SeongSu Kim, Chan-Uk Jeon, HanKu Cho

Proceedings Volume 7748, 774804 (2010) https://doi.org/10.1117/12.868292

KEYWORDS: Carbon, Extreme ultraviolet lithography, Ions, Extreme ultraviolet, Contamination, Photomasks, Reflectivity, Ruthenium, Air contamination, Optical lithography

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Proceedings Article | 26 May 2010 Paper

Mask writing time explosion and its effect on CD control in e-beam lithography

Sang Hee Lee, Jin Choi, Seong Jun Min, Hee Bom Kim, Byung Gook Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7748, 77480J (2010) https://doi.org/10.1117/12.868264

KEYWORDS: Photomasks, Electron beam lithography, Optical proximity correction, Optical simulations, Error analysis, Beam controllers, Mask making, Error control coding, Vestigial sideband modulation, Lithography

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Proceedings Article | 26 May 2010 Paper

E-beam writing time improvement for inverse lithography technology mask for full-chip

Guangming Xiao, Dong Hwan Son, Tom Cecil, Dave Irby, David Kim, Ki-Ho Baik, Byung-Gook Kim, SungGon Jung, Sung Soo Suh, HanKu Cho

Proceedings Volume 7748, 77481T (2010) https://doi.org/10.1117/12.867995

KEYWORDS: SRAF, Photomasks, Image segmentation, Lithography, Control systems, Stereolithography, Critical dimension metrology, Electron beam lithography, Manufacturing, Resolution enhancement technologies

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Proceedings Article | 23 March 2010 Paper

Influence of mask surface roughness on 22nm node extreme ultraviolet lithography

Eun-Jin Kim, Jee-Hye You, Seoung-Sue Kim, Han-Ku Cho, Jinho Ahn, Ilsin An, Hye-Keun Oh

Proceedings Volume 7636, 76362K (2010) https://doi.org/10.1117/12.846895

KEYWORDS: Surface roughness, Extreme ultraviolet lithography, Reflectivity, Photomasks, Carbon, Extreme ultraviolet, Ruthenium, Image processing, Contamination, Optical lithography

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Proceedings Article | 20 March 2010 Paper

Printability and inspectability of programmed pit defects on the masks in EUV lithography

In-Yong Kang, Hwan-Seok Seo, Byung-Sup Ahn, Dong-Gun Lee, Dongwan Kim, Sungmin Huh, Cha-Won Koh, Brian Cha, Seoung-Sue Kim, Han-Ku Cho, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 7636, 76361B (2010) https://doi.org/10.1117/12.847956

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Defect inspection, Extreme ultraviolet, Critical dimension metrology, Visibility, Ion beams, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 20 March 2010 Paper

Absorber stack optimization in EUVL masks: lithographic performances in alpha demo tool and other issues

Hwan-Seok Seo, Dong-Gun Lee, Byung-Sup Ahn, Cha-Won Koh, In-Yong Kang, Tae Geun Kim, Hoon Kim, Dongwan Kim, Seong-Sue Kim, Han-Ku Cho

Proceedings Volume 7636, 76360X (2010) https://doi.org/10.1117/12.847955

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Extreme ultraviolet, Lithography, Inspection, Line width roughness, Scanners, Critical dimension metrology, Electroluminescence

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Proceedings Article | 20 March 2010 Paper

Patterning with EUVL: the road to 22nm node

Hyun-Woo Kim, Hai-Sub Na, Kyoung-Yong Cho, Chang-Min Park, Takahiro Yasue, Subramanya Mayya, Han-Ku Cho

Proceedings Volume 7636, 76360Q (2010) https://doi.org/10.1117/12.846474

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Line width roughness, Lithography, Deep ultraviolet, Polymers, Chemical reactions, Double patterning technology, Opacity, Photomasks

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Proceedings Article | 11 December 2009 Paper

Development and evaluation of new MRC parameter for aggressive mask optimization

Seong-bo Shim, Young-chang Kim, Seong-hoon Jang, Hee-bom Kim, Sung-woo Lee, Seong-woon Choi, Han-ku Cho, Chan-hoon Park

Proceedings Volume 7520, 75200U (2009) https://doi.org/10.1117/12.839398

KEYWORDS: Photomasks, SRAF, Inspection, Critical dimension metrology, Source mask optimization, Tolerancing, Manufacturing, Image quality, Scanning electron microscopy, Defect inspection

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Proceedings Article | 30 September 2009 Paper

Inverse lithography (ILT) mask manufacturability for full-chip device

Byung-Gook Kim, Sung Soo Suh, Sang Gyun Woo, HanKu Cho, Guangming Xiao, Dong Hwan Son, Dave Irby, David Kim, Ki-Ho Baik

Proceedings Volume 7488, 748812 (2009) https://doi.org/10.1117/12.833572

KEYWORDS: Photomasks, Inspection, Lithography, Manufacturing, SRAF, Optical proximity correction, Image segmentation, Error analysis, Resolution enhancement technologies, Scanning electron microscopy

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Proceedings Article | 23 September 2009 Paper

Aerial plane inspection for advanced photomask defect detection

Won Sun Kim, Jin Hyung Park, Dong Hoon Chung, Chan Uk Jeon, Han Ku Cho, Trent Hutchinson, Oscar Lee, William Huang, Aditya Dayal

Proceedings Volume 7488, 74882Q (2009) https://doi.org/10.1117/12.830139

KEYWORDS: Inspection, Photomasks, SRAF, Lithography, Defect detection, Reticles, Semiconducting wafers, Image resolution, Image processing, Wafer inspection

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Proceedings Article | 23 September 2009 Paper

Inspection of complex OPC patterns for 4x node and beyond

Sang Hoon Han, Wonil Cho, Won-Sun Kim, Dong Hoon Chung, Chan-Uk Jeon, HanKu Cho

Proceedings Volume 7488, 74882S (2009) https://doi.org/10.1117/12.830032

KEYWORDS: Inspection, SRAF, Optical proximity correction, Artificial intelligence, Defect detection, Semiconducting wafers, Photomasks, Reticles, Model-based design, Image resolution

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Proceedings Article | 23 September 2009 Paper

Mask pattern recovery by level set method based inverse inspection technology (IIT) and its application on defect auto disposition

Jin-Hyung Park, Paul D. H. Chung, Chan-Uk Jeon, Han Ku Cho, Linyong Pang, Danping Peng, Vikram Tolani, Tom Cecil, David Kim, KiHo Baik

Proceedings Volume 7488, 748809 (2009) https://doi.org/10.1117/12.830034

KEYWORDS: Photomasks, Inspection, Defect inspection, Lithography, SRAF, Image classification, Wafer-level optics, Semiconducting wafers, Defect detection, Scanning electron microscopy

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Proceedings Article | 9 June 2009 Paper

Trade-off between inverse lithography mask complexity and lithographic performance

Byung-Gook Kim, Sung Soo Suh, Byung-Sung Kim, Sang-Gyun Woo, Han-Ku Cho, Vikram Tolani, Grace Dai, Dave Irby, Kechang Wang, Guangming Xiao, David Kim, Ki-Ho Baik, Bob Gleason

Proceedings Volume 7379, 73791M (2009) https://doi.org/10.1117/12.824299

KEYWORDS: Photomasks, Lithography, Inspection, Logic, Manufacturing, Optical proximity correction, Model-based design, Scanning electron microscopy, Image processing, Systems modeling

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Proceedings Article | 11 May 2009 Paper

The novel plasma etching process for defect reduction in photomask fabrication

Ji-Hyun Lee, Il-Yong Jang, Yu Suk Jeong, Byounghoon Seung, Seong-Yong Moon, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7379, 737906 (2009) https://doi.org/10.1117/12.824247

KEYWORDS: Etching, Chromium, Plasma, Fluorine, Particles, Chlorine, Dielectrics, Plasma etching, Photomasks, Aluminum

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Proceedings Article | 11 May 2009 Paper

A new optical measurement method for verifying the exact change of thin films on the QZ blanks with ellipsometer

Songbae Moon, Seong-Yoon Kim, Gyung-Yoon Bang, Byung-Gook Kim, Sang-Gyun Woo, Han-ku Cho

Proceedings Volume 7379, 737913 (2009) https://doi.org/10.1117/12.824315

KEYWORDS: Chromium, Oxides, Optical testing, Thin films, Ellipsometry, Photoresist processing, Photomasks, Atomic force microscopy, Binary data, Transmittance

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Proceedings Article | 11 May 2009 Paper

E-beam shot count estimation at 32 nm HP and beyond

Jin Choi, Sang Hee Lee, Dongseok Nam, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7379, 737917 (2009) https://doi.org/10.1117/12.824284

KEYWORDS: Optical proximity correction, Photomasks, Semiconducting wafers, Lithography, Image processing, Line edge roughness, Edge roughness, Electron beam lithography, Critical dimension metrology, Vestigial sideband modulation

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Proceedings Article | 1 April 2009 Paper

Line edge and width roughness dependency on each ingredient of extreme ultraviolet molecular resist

Hyunsu Kim, In Wook Cho, Seong-Sue Kim, Han-Ku Cho, Hye-Keun Oh

Proceedings Volume 7273, 72732E (2009) https://doi.org/10.1117/12.814055

KEYWORDS: Line edge roughness, Monte Carlo methods, Extreme ultraviolet lithography, Diffusion, Molecules, Extreme ultraviolet, Image processing, Lithography, Polymers, Line width roughness

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Proceedings Article | 1 April 2009 Paper

Reduction of line width and edge roughness by resist reflow process for extreme ultra-violet lithography

In Wook Cho, Joon-Min Park, Hyunsu Kim, Joo-Yoo Hong, Seong-Sue Kim, Han-Ku Cho, Hye-Keun Oh

Proceedings Volume 7273, 72732D (2009) https://doi.org/10.1117/12.814108

KEYWORDS: Line edge roughness, Line width roughness, Photoresist processing, Lithography, Polymers, Surface roughness, Diffusion, Glasses, Extreme ultraviolet lithography, Monte Carlo methods

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Proceedings Article | 23 March 2009 Paper

Requirements of the inspection for double patterning technology reticles

Wonil Cho, Won-Sun Kim, Sung-Joon Sohn, Sunpyo Lee, Jihyeon Choi, Yonghoon Kim, HanKu Cho

Proceedings Volume 7272, 72721T (2009) https://doi.org/10.1117/12.814101

KEYWORDS: Inspection, Reticles, Double patterning technology, Defect detection, Critical dimension metrology, Ear, Semiconducting wafers, Photomasks, Defect inspection, Radon

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Proceedings Article | 18 March 2009 Paper

Incident angle change caused by different off-axis illumination in extreme ultraviolet lithography

Eun-Jin Kim, Jee-Hye You, Seong-Sue Kim, Han-Ku Cho, Ilsin An, Hye-Keun Oh

Proceedings Volume 7271, 727143 (2009) https://doi.org/10.1117/12.814031

KEYWORDS: Lithographic illumination, Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Extreme ultraviolet, Optical lithography, Lithography, Reflectivity, Coherence (optics), Resolution enhancement technologies

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Proceedings Article | 18 March 2009 Paper

Characteristics and issues of an EUVL mask applying phase-shifting thinner absorber for device fabrication

Hwan-Seok Seo, Dong-Gun Lee, Byung-Sup Ahn, Hakseung Han, Sungmin Huh, In-Yong Kang, Hoon Kim, Dongwan Kim, Seong-Sue Kim, Han-Ku Cho

Proceedings Volume 7271, 72710D (2009) https://doi.org/10.1117/12.813932

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Nanoimprint lithography, Silicon, Semiconducting wafers, Ruthenium, Extreme ultraviolet, Reflectivity, Phase shifts, Refractive index

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Proceedings Article | 20 October 2008 Paper

A new paradigm for haze improvement: retardation of haze occurrence by creating mask substrate insensitive to chemical contamination level

Han-Shin Lee, Jaehyuck Choi, Jin-Sik Jung, Jong-Keun Oh, Soo-Jung Kang, Hae-Young Jeong, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 7122, 712217 (2008) https://doi.org/10.1117/12.801422

KEYWORDS: Air contamination, Ions, Resistance, Sulfur, Photomasks, Contamination, Transmittance, Surface roughness, Chemical analysis, Molecules

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Proceedings Article | 17 October 2008 Paper

Mask process monitoring with optical CD measurements for sub-50-nm

Kyung-Yoon Bang, Jin-Back Park, Jeong-Hun Roh, Dong-Hoon Chung, Sung-Yong Cho, Yong-Hoon Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7122, 71222V (2008) https://doi.org/10.1117/12.801416

KEYWORDS: Critical dimension metrology, Chromium, Scatterometry, Ultraviolet radiation, Scanning electron microscopy, Optical testing, Scatter measurement, Atomic force microscopy, Process control, Binary data

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Proceedings Article | 17 October 2008 Paper

Analysis of process margin in EUV mask repair with nano-machining

Su-Young Lee, Geun-Bae Kim, Hong-Seok Sim, Sang-Hyeon Lee, Hwa-Sung Kim, Jung-Hwan Lee, Hwan-Seok Seo, Hak-Seung Han, Seong-Sue Kim, Seong-Yong Moon, Sang-Gyun Woo, Ron Bozak, Andrew Dinsdale, Tod Robinson, David Lee, HanKu Cho

Proceedings Volume 7122, 71222I (2008) https://doi.org/10.1117/12.801415

KEYWORDS: Photomasks, Extreme ultraviolet, Error analysis, Extreme ultraviolet lithography, Scanning electron microscopy, Semiconducting wafers, Diffractive optical elements, Image processing, Critical dimension metrology, Factor analysis

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Proceedings Article | 17 October 2008 Paper

Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL

Il-Yong Jang, Sung-Min Huh, Seong-Yong Moon, Sang-Gyun Woo, Jin-Kwan Lee, Sang Heup Moon, HanKu Cho

Proceedings Volume 7122, 712228 (2008) https://doi.org/10.1117/12.801413

KEYWORDS: Etching, Critical dimension metrology, Photomasks, Oxides, Tantalum, Extreme ultraviolet lithography, Optical properties, Plasma, Semiconducting wafers, Extreme ultraviolet

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Proceedings Article | 19 May 2008 Paper

Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine

Won-Tai Ki, Ji-Hyeon Choi, Byung-Gook Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7028, 70280E (2008) https://doi.org/10.1117/12.793022

KEYWORDS: Forward error correction, Monte Carlo methods, Computer simulations, Photomasks, Convolution, Electron beam lithography, Cadmium sulfide, Vestigial sideband modulation, Double patterning technology, Dry etching

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Proceedings Article | 19 May 2008 Paper

Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process

Jaehyuck Choi, Jin-sik Jung, Han-shin Lee, Jongkeun Oh, Soojung Kang, Haeyong Jeong, Yonghoon Kim, HanKu Cho

Proceedings Volume 7028, 702818 (2008) https://doi.org/10.1117/12.793049

KEYWORDS: Air contamination, Ions, Oxides, Photomasks, Industrial chemicals, Profiling, Sulfur, Scanning probe microscopy, Information operations, Silica

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Proceedings Article | 19 May 2008 Paper

Practical application of aerial imaging mask inspection for memory devices

Hyun Joo Baik, Dong Hoon Chung, Yong Hoon Kim, Han Ku Cho, Amir Sagiv, Shmoolik Mangan, Ziv Parizat, Eun Young Park, Yaniv Brami, Dana Bernstein

Proceedings Volume 7028, 70281G (2008) https://doi.org/10.1117/12.793057

KEYWORDS: Inspection, Airborne remote sensing, Photomasks, Critical dimension metrology, Signal detection, Semiconducting wafers, Sensors, Printing, Optical lithography, Defect detection

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Proceedings Article | 19 May 2008 Paper

IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops

Heebom Kim, MyoungSoo Lee, Sukho Lee, Young-Su Sung, Byunggook Kim, Sang-Gyun Woo, HanKu Cho, Michael Ben Yishai, Lior Shoval, Christophe Couderc

Proceedings Volume 7028, 70281K (2008) https://doi.org/10.1117/12.793061

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Scanning electron microscopy, Process control, Airborne remote sensing, Lithography, Defect inspection, Imaging systems

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Proceedings Article | 19 May 2008 Paper

Image placement error of photomask due to pattern loading effect: analysis and correction technique for sub-45 nm node

Jin Choi, Sang Hee Lee, Dongseok Nam, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7028, 70281X (2008) https://doi.org/10.1117/12.793074

KEYWORDS: Photomasks, Etching, Image processing, Error analysis, Image registration, Electrons, Electron beam lithography, Lithography, Finite element methods, Critical dimension metrology

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Proceedings Article | 27 March 2008 Paper

Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Sungmin Huh, Hoon Kim, Gisung Yoon, Jaehyuck Choi, Han-Shin Lee, Dong Gun Lee, Byungsup Ahn, Hwan-Seok Seo, Dongwan Kim, Seoung Sue Kim, Han Ku Cho, Takeo Watanabe, Hiroo Kinoshita

Proceedings Volume 6921, 692115 (2008) https://doi.org/10.1117/12.772412

KEYWORDS: Photomasks, Carbon, Contamination, Ruthenium, Extreme ultraviolet lithography, Silicon, Critical dimension metrology, Reflectivity, Extreme ultraviolet, Semiconducting wafers

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Proceedings Article | 7 March 2008 Paper

Rigorous modeling and analysis of impact produced by microstructures in mask on wafer pattern fidelity

Irina Pundaleva, Roman Chalykh, MyoungSoo Lee, HeeBom Kim, ByungGook Kim, HanKu Cho

Proceedings Volume 6924, 69244H (2008) https://doi.org/10.1117/12.773203

KEYWORDS: Photomasks, Semiconducting wafers, Diffraction, Quartz, Distortion, Transmittance, Femtosecond phenomena, Refractive index, Binary data, Pulsed laser operation

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Proceedings Article | 4 March 2008 Paper

Predicting conversion time of circuit design file by artificial neural networks

Sung-Hoon Jang, Jee-Hyong Lee, Byoung-Sup Ahn, Won-Tai Ki, Ji-Hyeon Choi, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6925, 69250W (2008) https://doi.org/10.1117/12.771771

KEYWORDS: Data conversion, Neural networks, Photomasks, Data modeling, Statistical analysis, Error analysis, Neurons, Statistical modeling, Explosives, Artificial intelligence

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Proceedings Article | 14 November 2007 Paper

Full-chip-based subresolution assist features correction for mask manufacturing

Ju-Mi Bang, Issei Masumoto, Min-Kyu Ji, Sung-Hoon Jang, Isao Aburatani, Ji-Hyun Choi, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6730, 67302F (2007) https://doi.org/10.1117/12.746349

KEYWORDS: SRAF, Photomasks, Critical dimension metrology, Manufacturing, Printing, Lithography, Inspection, Mask making, Control systems, Semiconductors

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Proceedings Article | 30 October 2007 Paper

Requirements of photomask registration for the 45nm node and beyond: Is it possible?

Jin Choi, Hee Bom Kim, Sang Hee Lee, Dong Hun Lee, Hae Young Jeong, Jeung Woo Lee, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 6730, 67301O (2007) https://doi.org/10.1117/12.746571

KEYWORDS: Photomasks, Image registration, Pellicles, Electron beam lithography, Finite element methods, Etching, Optical lithography, Positioning equipment, Error analysis, Distortion

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Proceedings Article | 30 October 2007 Paper

2D measurement using CD SEM for arbitrarily shaped patterns

Hyung-Joo Lee, So-Yoon Bae, Dong-Hoon Chung, Sang-Gyun Woo, HanKu Cho, Jun Matsumoto, Takayuki Nakamura, Dong Il Shin, TaeJun Kim

Proceedings Volume 6730, 673037 (2007) https://doi.org/10.1117/12.746453

KEYWORDS: Critical dimension metrology, Photomasks, Scanning electron microscopy, Semiconducting wafers, Resolution enhancement technologies, Edge detection, Semiconductors, Optical metrology, Detection and tracking algorithms, Lithography

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Proceedings Article | 30 October 2007 Paper

Improvement of mask CD uniformity for below 45-nm node technology

Hojune Lee, Seokjong Bae, Junghoon Park, Dongseok Nam, Byunggook Kim, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 6730, 67302Z (2007) https://doi.org/10.1117/12.746810

KEYWORDS: Etching, Critical dimension metrology, Chromium, Photomasks, Curium, Ions, Electron beams, Plasma etching, Photoresist processing, Information operations

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Proceedings Article | 30 October 2007 Paper

The study of CD error in mid-local pattern area caused by develop loading effect

Man-Kyu Kang, Jung-Hun Lee, Seong-Yoon Kim, Byung-Gook Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6730, 67300H (2007) https://doi.org/10.1117/12.746565

KEYWORDS: Critical dimension metrology, Photoresist developing, Photoresist materials, Error analysis, Chemical analysis, Photoresist processing, Process control, Photomasks, Control systems, Electron beams

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Proceedings Article | 25 October 2007 Paper

A pragmatic approach to high sensitivity defect inspection in the presence of mask process variability

Sang Hoon Han, Jin Hyung Park, Dong Hoon Chung, Sang-Gyun Woo, Han Ku Cho, David Kim, Chunlin Chen, Ki-Hun Park, Gregg Inderhees

Proceedings Volume 6730, 673024 (2007) https://doi.org/10.1117/12.746567

KEYWORDS: Inspection, SRAF, Photomasks, Reticles, Optical proximity correction, Defect inspection, Databases, Opacity, Semiconducting wafers, Defect detection

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Proceedings Article | 29 May 2007 Paper

Substrate effects on the characteristics of haze defect formation on the photomask surface under exposure condition

Jaehyuck Choi, Han-shin Lee, Jin-sik Jung, Byung Cheol Cha, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 6607, 660709 (2007) https://doi.org/10.1117/12.728922

KEYWORDS: Ions, Air contamination, Chromium, Sulfur, Profiling, Photomasks, Molybdenum, Surface roughness, Chemical analysis, Industrial chemicals

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Proceedings Article | 21 May 2007 Paper

Shot-based MRC flow by using full chip MRC tool

Min-Kyu Ji, Sung-Hoon Jang, Sung-Jun Son, Ji-Hyeun Choi, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6607, 66070V (2007) https://doi.org/10.1117/12.728945

KEYWORDS: Photomasks, Inspection, SRAF, Data conversion, Manufacturing, Optical proximity correction, Error analysis, Resolution enhancement technologies, Defect inspection, Electronics

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Proceedings Article | 15 May 2007 Paper

New PEC optimization for the mask fabrication of sub-50-nm memory device

Sanghee Lee, Dongguk Ryu, Junghoon Park, Dongseok Nam, Heebom Kim, Byunggook Kim, Sanggyun Woo, Hanku Cho

Proceedings Volume 6607, 660725 (2007) https://doi.org/10.1117/12.728988

KEYWORDS: Mask making, Photomasks, Electron beam lithography, Monte Carlo methods, Control systems, Optical proximity correction, Electron beams, Laser scattering, Scattering, Backscatter

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Proceedings Article | 15 May 2007 Paper

Robust approach to determine the optimized illumination condition using process window analysis

Yong-Jin Chun, Sung-Woo Lee, Sooryong Lee, Young-Mi Lee, Sungsoo Suh, Suk-Joo Lee, Han-Ku Cho, Ho-Jin Park, Brad Falch

Proceedings Volume 6607, 660737 (2007) https://doi.org/10.1117/12.729026

KEYWORDS: Photomasks, Optical proximity correction, Nanoimprint lithography, Fiber optic illuminators, Image enhancement, Design for manufacturing, Critical dimension metrology, Semiconducting wafers, Lithography, Diffraction

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Several criteria are applied to optimize the best illumination and bias condition for a layer. Normalized image log-slope (NILS) and mask error enhancement factor (MEEF) are promising candidates to simply decide the optimized condition. NILS represents imaging capability and MEEF represents the mask uniformity influence on wafer image. MEEF has inversely relationship with NILS, but the optimized point of NILS does not exactly coincide with that of MEEF. Besides NILS and MEEF, the depth of focus (DoF) is an important factor for defining the process margin. The process window (PW) is expressed by DoF and exposure Latitude (EL). PW is general parameter used to determine the best lithographic condition. Large EL can be obtained at the condition with good image performance. In order to include mask uniformity effect in PW analysis, the common PW overlapping the final layout with positive and negative biased layouts is adopted. Starting with the minimum NA, sigma and threshold, OPC is performed to satisfy the target layout using aerial image model, and the final OPCed layout is obtained. The positive and negative biased layouts are generated from the final OPCed layout. The bias limit is determined considering mask uniformity. The common PW obtained by overlapping the final layout with positive and negative biased layouts is calculated. Then, NA, sigma and threshold are increased until the maximum values are reached. The common PW at each NA, sigma and threshold value is obtained using the same flow sequence. Comparing among calculated PWs, the NA, sigma and threshold of the maximum PW can be chosen as the best illuminator and bias condition. In this paper, the optimized illumination and bias condition is determined using PW for 60 nm memory device. The process flow is implemented by an OPC tool. By using the OPC tool for the illuminator optimization, the actual layout and multiple monitoring points can be measured. In spite of a large number of calculations, the fast calculation speed can be obtained by using the distributed process.

Proceedings Article | 14 May 2007 Paper

Study of mask structure for 45-nm node based on manufacturability and lithographic performance

Jong Gul Doh, Cheol Hong Park, Yong Seung Moon, Bo Hye Kim, Sung Won Kwon, Sun Young Choi, Sung Hyuck Kim, Seong Yoon Kim, Byung Gook Kim, Sang Gyun Woo, Han Ku Cho

Proceedings Volume 6607, 66071U (2007) https://doi.org/10.1117/12.728977

KEYWORDS: Photomasks, Binary data, Chromium, Etching, Absorbance, Lithography, Manufacturing, Semiconducting wafers, Optical simulations, Electron beam lithography

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Proceedings Article | 14 May 2007 Paper

Process latitude dependency on local photomask haze defect in 70-nm binary intensity mask

Young-Min Kang, Sung-Jin Kim, Jin-Back Park, Wook Chang, Seung-Wook Park, Jai-Soon Kim, Han-Koo Cho, Hye-Keun Oh

Proceedings Volume 6607, 660720 (2007) https://doi.org/10.1117/12.728983

KEYWORDS: Air contamination, Photomasks, Phase shifts, Electroluminescence, Binary data, Reticles, Semiconducting wafers, Critical dimension metrology, Semiconductors, Crystals

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Proceedings Article | 14 May 2007 Paper

Optical performance enhancement technique for 45-nm node with binary mask

Jin-Sik Jung, Hee-Bom Kim, Jeung-Woo Lee, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6607, 66071I (2007) https://doi.org/10.1117/12.728965

KEYWORDS: Oxides, Photomasks, Nanoimprint lithography, Binary data, Resolution enhancement technologies, Etching, Manufacturing, Chromium, Diffraction, Phase shifts

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Proceedings Article | 14 May 2007 Paper

Requirements of nano-machining repair system for 45-nm node

Sang-Hyeon Lee, Hwa-Sung Kim, Hong-Seok Shim, Su-Young Lee, Geun-Bae Kim, Hyuk-Joo Kwon, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6607, 660712 (2007) https://doi.org/10.1117/12.728951

KEYWORDS: Scanning electron microscopy, Photomasks, Diamond, Neodymium, Critical dimension metrology, Chromium, Quartz, Transmittance, Adhesives, Atomic force microscopy

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Proceedings Article | 12 May 2007 Paper

Scatterometry based profile metrology of two-dimensional patterns of EUV masks

Irina Pundaleva, Roman Chalykh, Heebom Kim, Byunggook Kim, Hanku Cho

Proceedings Volume 6607, 66070S (2007) https://doi.org/10.1117/12.728942

KEYWORDS: Scatterometry, 3D metrology, Extreme ultraviolet, Photomasks, Diffraction, Scatter measurement, Polarization, Metrology, Extreme ultraviolet lithography, Shape analysis

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Proceedings Article | 5 April 2007 Paper

Image analysis of alignment and overlay marks with compound structure

Roman Chalykh, Irina Pundaleva, Jang-Ho Shin, Seong-Sue Kim, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6518, 65182D (2007) https://doi.org/10.1117/12.711277

KEYWORDS: Overlay metrology, Optical alignment, Antireflective coatings, Image analysis, Coating, Semiconductors, Image quality, Finite-difference time-domain method, Optical lithography, Semiconducting wafers

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Proceedings Article | 5 April 2007 Paper

Overlay metrology for dark hard mask process: simulation and experiment study

Jangho Shin, Roman Chalykh, Hyunjae Kang, SeongSue Kim, SukJoo Lee, Han-Ku Cho

Proceedings Volume 6518, 65182U (2007) https://doi.org/10.1117/12.711389

KEYWORDS: Photomasks, Overlay metrology, Semiconducting wafers, Optical alignment, Image processing, Photoresist materials, Semiconductors, Image quality, Scanners, Lithography

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Proceedings Article | 27 March 2007 Paper

The choice of mask in consideration of polarization effects at high-NA system

Sung-Hyuck Kim, Soon-Ho Kim, Sang-Yong Yu, Yong-Hoon Kim, Jeung-Woo Lee, Han-Ku Cho

Proceedings Volume 6520, 65204R (2007) https://doi.org/10.1117/12.711318

KEYWORDS: Photomasks, Polarization, Binary data, Optical lithography, Resolution enhancement technologies, Immersion lithography, Image enhancement, Lithography, Image quality, Phase shifts

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Proceedings Article | 26 March 2007 Paper

A method for generating assist-features in full-chip scale and its application to contact layers of sub-70-nm DRAM devices

Dong-Woon Park, Sangwook Kim, Chan Hwang, Sukjoo Lee, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6520, 652028 (2007) https://doi.org/10.1117/12.713055

KEYWORDS: Optical proximity correction, Model-based design, Photomasks, Lithography, Semiconducting wafers, Light sources, Image quality, Manufacturing, Optical simulations, Reliability

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Proceedings Article | 21 March 2007 Paper

Properties of EUVL masks as a function of capping layer and absorber stack structures

Hwan-Seok Seo, Jinhong Park, Seung-Yoon Lee, Joo-On Park, Hun Kim, Seong-Sue Kim, Han-Ku Cho

Proceedings Volume 6517, 65171G (2007) https://doi.org/10.1117/12.713301

KEYWORDS: Reflectivity, Silicon, Ruthenium, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Molybdenum, Multilayers, Refractive index, Ion beams

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Proceedings Article | 20 March 2007 Paper

The effect of localized mask density variations on image quality in EUV lithography

Jinhong Park, Hwanseok Seo, Seong-Sue Kim, HanKu Cho, Joo-Tae Moon

Proceedings Volume 6517, 651723 (2007) https://doi.org/10.1117/12.713303

KEYWORDS: Stray light, Photomasks, Image quality, Light scattering, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Reticles, Lithography, Reflectivity

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Proceedings Article | 20 October 2006 Paper

Simulation of critical dimension and profile metrology based on scatterometry method

Roman Chalykh, Irina Pundaleva, SeongSue Kim, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6349, 63491K (2006) https://doi.org/10.1117/12.688623

KEYWORDS: Critical dimension metrology, Scatterometry, Polarization, Diffraction, Diffraction gratings, Metrology, Scatter measurement, Overlay metrology, Magnetism, Light scattering

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Proceedings Article | 20 October 2006 Paper

OPC to account for thick mask effect using simplified boundary layer model

Sangwook Kim, Young-Chang Kim, Sungsoo Suh, Sook Lee, Sungwoo Lee, Sukjoo Lee, Hanku Cho, Jootae Moon, Jonathan Cobb, Sooryong Lee

Proceedings Volume 6349, 63493I (2006) https://doi.org/10.1117/12.686394

KEYWORDS: Optical proximity correction, Near field, Polarization, 3D modeling, Photomasks, Critical dimension metrology, Chromium, Binary data, Optical lithography, Transmittance

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Proceedings Article | 21 June 2006 Paper

Analysis method to determine and characterize the mask mean-to-target and uniformity specification

Sung-Woo Lee, Leonardus Leunissen, Jeroen Van de Kerkhove, Vicky Philipsen, Rik Jonckheere, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6281, 62810U (2006) https://doi.org/10.1117/12.692804

KEYWORDS: Photomasks, Critical dimension metrology, Tolerancing, Cadmium, Manufacturing, Semiconducting wafers, Polarization, Logic devices, Fiber optic illuminators, Mask making

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Proceedings Article | 20 May 2006 Paper

Simulation and experiments for inspection properties of EUV mask defects

Jinhong Park, Seong-Sue Kim, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6283, 62833E (2006) https://doi.org/10.1117/12.681833

KEYWORDS: Inspection, Photomasks, Confocal microscopy, Extreme ultraviolet, Semiconducting wafers, Reflectivity, Defect detection, Deep ultraviolet, Visible radiation, Imaging systems

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Proceedings Article | 29 March 2006 Paper

Spin-on hard mask with dual-BARC property for 50-nm devices

Jung Hwan Hah, Yun Sook Chae, Yun-Kyeong Jang, Manhyoung Ryoo, Sang-Jun Choi, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6153, 61530L (2006) https://doi.org/10.1117/12.656075

KEYWORDS: Etching, Chemical vapor deposition, Photomasks, System on a chip, Lithography, Optical properties, Carbon, Silicon, Semiconductors, Immersion lithography

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Proceedings Article | 29 March 2006 Paper

Top barrier coating materials for immersion lithography and beyond

Mitsuhiro Hata, Jin-Young Yoon, Jung-Hwan Hah, Man-Hyoung Ryoo, Sang-Jun Choi, Han-Ku Cho

Proceedings Volume 6153, 61531Y (2006) https://doi.org/10.1117/12.655955

KEYWORDS: Photoresist materials, Thin film coatings, Extreme ultraviolet lithography, Polymers, Coating, Photoresist developing, Semiconducting wafers, Extreme ultraviolet, Lithography, Scanning electron microscopy

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Proceedings Article | 24 March 2006 Paper

Investigation on polarization monitoring mask: pattern design and experimental verification

Chan Hwang, Dong-Woon Park, Jang-Ho Shin, Dong-Seok Nam, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6152, 61521M (2006) https://doi.org/10.1117/12.657054

KEYWORDS: Polarization, Photomasks, Polarizers, Semiconducting wafers, Diffraction, Optical lithography, Lithographic illumination, Reticles, Critical dimension metrology, Printing

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Proceedings Article | 24 March 2006 Paper

Improving model-based OPC performance for sub-60nm devices using real source optical model

Sunggon Jung, In-Sung Kim, Young-Seog Kang, Gi-Sung Yeo, Sang-Gyun Woo, HanKu Cho, Joo-Tae Moon

Proceedings Volume 6156, 61561H (2006) https://doi.org/10.1117/12.655954

KEYWORDS: Optical proximity correction, Data modeling, Performance modeling, Model-based design, Instrument modeling, Scanners, Optical lithography, Image filtering, Error analysis, Calibration

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Proceedings Article | 24 March 2006 Paper

Macro analysis of line edge and line width roughness

Jangho Shin, Jinyoung Yoon, Youngjae Jung, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6152, 61520X (2006) https://doi.org/10.1117/12.655516

KEYWORDS: Line width roughness, Software development, Photoresist materials, Edge roughness, Transistors, Critical dimension metrology, Polarization, Statistical analysis, Spectrum analysis, Semiconductors

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Proceedings Article | 23 March 2006 Paper

Defect inspection of EUV mask blank using confocal microscopy: simulation and experiment

Seong-Sue Kim, Jinhong Park, Roman Chalykh, Jiehun Kang, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6151, 61511C (2006) https://doi.org/10.1117/12.656221

KEYWORDS: Confocal microscopy, Photomasks, Extreme ultraviolet, Smoothing, Defect inspection, Microscopes, Data modeling, Molybdenum, Silicon, Extreme ultraviolet lithography

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Proceedings Article | 15 March 2006 Paper

Mask topography effect on OPC at hyper-NA lithography

Sook Lee, In-Sung Kim, Yong-Jin Chun, Sang-Wook Kim, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6154, 61541R (2006) https://doi.org/10.1117/12.655998

KEYWORDS: Optical proximity correction, Photomasks, 3D modeling, Binary data, 3D acquisition, Lithography, Data modeling, Diffusion, 3D image processing, Optimization (mathematics)

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Proceedings Article | 14 March 2006 Paper

Toward DFM: process worthy design and OPC through verification method using MEEF, TF-MEEF, and MTT

In-Sung Kim, Sungsoo Suh, Sunggon Jung, Eunmi Lee, Young-Seog Kang, Sukjoo Lee, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 6156, 61560L (2006) https://doi.org/10.1117/12.655482

KEYWORDS: Optical proximity correction, Design for manufacturing, Photomasks, Semiconducting wafers, Visualization, Image quality, Lithography, Manufacturing, Image processing, Critical dimension metrology

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Proceedings Article | 5 November 2005 Paper

Pattern type specific modeling and correction methodology at high NA and off-axis illumination

Sungsoo Suh, Young-seog Kang, In-sung Kim, Sang-gyun Woo, Hanku Cho, Joo-tae Moon

Proceedings Volume 5992, 599220 (2005) https://doi.org/10.1117/12.632376

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Semiconducting wafers, Reticles, Image processing, Process modeling, Photomasks, Signal processing, Model-based design

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Proceedings Article | 12 May 2005 Paper

The application criterion of model-based optical proximity correction in a low k1 process

Doo-Youl Lee, In-Sung Kim, Sung-Gon Jung, Myoung-Ho Jung, Joo-On Park, Seok-Hwan Oh, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599013

KEYWORDS: Optical proximity correction, Model-based design, Resolution enhancement technologies, Lithography, Scanning electron microscopy, Photography, Process modeling, Photomasks, Scanners, Semiconducting wafers

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Proceedings Article | 12 May 2005 Paper

Measurement technique of nontelecentricity of pupil-fill and its application to 60 nm NAND flash memory patterns

Jangho Shin, SukJoo Lee, Hochul Kim, Chan Hwang, SeongSue Kim, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598655

KEYWORDS: Fiber optic illuminators, Reticles, Semiconducting wafers, Image sensors, Photoresist materials, Overlay metrology, Optical lithography, Scanners, Optics manufacturing, Metrology

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Proceedings Article | 12 May 2005 Paper

Requirement of in-field illumination control for low k1 imaging below 0.3

Chan Hwang, Jangho Shin, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599532

KEYWORDS: Critical dimension metrology, Error analysis, Lithographic illumination, Error control coding, Control systems, Optical lithography, Imaging systems, Computer simulations, Lithography, Optical proximity correction

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Proceedings Article | 12 May 2005 Paper

Era of double exposure in 70 nm node DRAM cell

Sang-Jin Kim, Joon-Soo Park, Tae-Young Kim, Byeong-Soo Kim, Gi-Sung Yeo, Seok-Hwan Oh, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599458

KEYWORDS: Photomasks, Double patterning technology, Lithography, Lithographic illumination, Optical lithography, Critical dimension metrology, Distortion, Phase shifts, Monte Carlo methods, Personal protective equipment

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Proceedings Article | 10 May 2005 Paper

Optimization of geometry of alignment mark using rigorous coupled-wave analysis (RCWA)

Roman Chalykh, Seong-Sue Kim, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601142

KEYWORDS: Optical alignment, Diffraction, Diffraction gratings, Overlay metrology, Image quality, Silica, Finite-difference time-domain method, Near field, Extreme ultraviolet, Signal processing

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Proceedings Article | 10 May 2005 Paper

Novel methodology of employing scatterometry to assess optical proximity correction test pattern

S. Suh, I. Kim, E. Lee, Y. Kang, S. Lee, S. Woo, H. Cho

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598698

KEYWORDS: Optical proximity correction, Scatterometry, Metrology, Data modeling, Semiconducting wafers, Critical dimension metrology, Model-based design, Optical testing, Inspection, Calibration

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Proceedings Article | 10 May 2005 Paper

Influence of material on process focus budget and process window of 80nm DRAM devices

Sung Won Choi, SukJoo Lee, Jangho Shin, Sang-Gyun Woo, HanKu Cho, Joo-Tae Moon

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600166

KEYWORDS: Semiconducting wafers, Scanners, Phase shifts, Polishing, Photomasks, Lithography, Optical lithography, Materials processing, Digital signal processing, Phase shift keying

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Proceedings Article | 6 May 2005 Paper

Defect printability and defect inspection simulations of patterned EUVL mask using rigorous coupled-wave analysis

Seong-Sue Kim, Roman Chalyck, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600459

KEYWORDS: Photomasks, Defect inspection, Extreme ultraviolet lithography, Confocal microscopy, Near field, Inspection, Fourier optics, Near field optics, Projection systems, Light sources

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Proceedings Article | 4 May 2005 Paper

In-line chemical shrink process for 70 nm contact hole patterns by the room-temperature electrostatic self-assembly

Jung Hwan Hah, Subramanya Mayya, Mitsuhiro Hata, Hyun-Woo Kim, Man-Hyoung Ryoo, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon, Byung-Il Ryu

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599450

KEYWORDS: Optical lithography, Lithography, Photoresist processing, Chemical reactions, Resolution enhancement technologies, Hydrogen, Scanning electron microscopy, Polymers, Interfaces, Semiconductor manufacturing

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Proceedings Article | 4 May 2005 Paper

Application of bi-layer resist on 70 nm node memory devices

Yool Kang, Jin Hong, Shi-Yong Lee, Hyung-Rae Lee, Man-Hyoung Ryoo, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599484

KEYWORDS: Etching, Line width roughness, Lithography, Silicon, Dry etching, Photomasks, Photoresist processing, Semiconducting wafers, Chemistry, Optical lithography

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Proceedings Article | 4 May 2005 Paper

Novel chemical shrinkage material for small contact hole and small space patterning

Mitsuhiro Hata, Jung-Hwan Hah, Hyun-Woo Kim, Man-Hyoung Ryoo, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599468

KEYWORDS: Polymers, Photoresist materials, Semiconducting wafers, Optical lithography, Chemical reactions, Magnesium, Critical dimension metrology, Resolution enhancement technologies, Industrial chemicals, Scanning electron microscopy

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