Paper
12 April 2007 Distribution control of protecting groups and its effect on LER for EUV molecular resist
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Abstract
We have designed and synthesized a molecular resist material, which has no distribution of the protecting groups and have evaluated its performance as a molecular resist with EB and EUV exposure tool. The molecular resist attained a resolution of sub-45 nm patterning at an exposure dose of 12 mJ/cm2. It was found that controlling the distribution of the protecting groups in a molecular resist material has a great impact on improving Line Edge Roughness (LER). Low LER values of 3.1 nm (inspection length: L = 620 nm) and 3.6 nm (L = 2000 nm) were achieved with this molecular resist using Extreme UltraViolet (EUV) lithography tool.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daiju Shiono, Hideo Hada, Hiroto Yukawa, Hiroaki Oizumi, Iwao Nishiyama, Kyoko Kojima, and Hiroshi Fukuda "Distribution control of protecting groups and its effect on LER for EUV molecular resist", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193U (12 April 2007); https://doi.org/10.1117/12.711311
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Cited by 11 scholarly publications and 1 patent.
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KEYWORDS
Line edge roughness

Lithography

Extreme ultraviolet lithography

Extreme ultraviolet

Inspection

Scanning electron microscopy

Analytical research

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