Intersubband photonic devices by group-III nitrides

P. Holmström; X. Y. Liu; H. Uchida; T. Aggerstam; A. Kikuchi; K. Kishino; S. Lourdudoss; T. G. Andersson; L. Thylén

doi:10.1117/12.754372

26 November 2007 Intersubband photonic devices by group-III nitrides

P. Holmström, X. Y. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. G. Andersson, L. Thylén

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67821N (2007) https://doi.org/10.1117/12.754372
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

The characteristics of intersubband transitions in III-nitride quantum wells are promising for detectors and all-optical switches through a high intrinsic speed (~1 THz), and can also provide a high optical saturation power and a desired small negative chirp parameter in electroabsorption modulators. The high LO-phonon energy allows to improve the operating temperature of THz emitters. Recent achievements and prospects for intersubband III-nitride photonic devices, mainly for λ=1.55 μm, are briefly reviewed. Further, means to enhance material quality by achieving crack-free growth of GaN/AlN multiple-quantum-well (MQW) structures, and by employing intersubband transitions in multiple-quantum-disk (MQD) structures incorporated into dislocation free GaN nanocolumns are discussed. We investigate the occurrence of cracks in MBE-grown GaN/AlN MQWs on GaN MOVPE templates with respect to the buffer layer, the number of QWs and the temperature reduction rate after growth. Intersubband absorption in GaN/AlN MQDs in the wavelength range 1.38-1.72 μm is demonstrated in three samples grown on Si(111).

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P. Holmström, X. Y. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. G. Andersson, and L. Thylén "Intersubband photonic devices by group-III nitrides", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821N (26 November 2007); https://doi.org/10.1117/12.754372

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