Characterization of a 0.25NA full-field EUV exposure tool

Oleg Kritsun; Bruno La Fontaine; Yudong Hao; Jie Li; Obert Wood; Sudharshanan Raghunathan; Tim Brunner; Chiew-Seng Koay; Hiroyuki Mizuno

doi:10.1117/12.816545

19 March 2009 Characterization of a 0.25NA full-field EUV exposure tool

Oleg Kritsun, Bruno La Fontaine, Yudong Hao, Jie Li, Obert Wood, Sudharshanan Raghunathan, Tim Brunner, Chiew-Seng Koay, Hiroyuki Mizuno

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 727121 (2009) https://doi.org/10.1117/12.816545
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The performance of a 0.25NA full-field EUV exposure tool is characterized in terms of CD uniformity, focus and overlay control, as well as dose uniformity. In addition to the characterization of the scanner, we explore the use of scatterometry techniques for the measurements of extremely fine resolution features, with critical dimensions below 40 nm. The stability of the scanner performance over an extended period of time is assessed.

Citation Download Citation

Oleg Kritsun, Bruno La Fontaine, Yudong Hao, Jie Li, Obert Wood, Sudharshanan Raghunathan, Tim Brunner, Chiew-Seng Koay, and Hiroyuki Mizuno "Characterization of a 0.25NA full-field EUV exposure tool", Proc. SPIE 7271, Alternative Lithographic Technologies, 727121 (19 March 2009); https://doi.org/10.1117/12.816545

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