Dr. Oleg Kritsun Profile

Dr. Oleg Kritsun

Director at INAM USA

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 10 April 2013 Paper

Scatterometry evaluation of focus-dose effects of EUV structures

Prasad Dasari, Oleg Kritsun, Jie Li, Catherine Volkman, Jiangtao Hu, Zhuan Liu

Proceedings Volume 8681, 86810T (2013) https://doi.org/10.1117/12.2012120

KEYWORDS: Critical dimension metrology, Scatterometry, Extreme ultraviolet lithography, Extreme ultraviolet, Semiconducting wafers, Metrology, Scanners, 3D modeling, Scanning electron microscopy, Ellipsometry

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Proceedings Article | 10 April 2013 Paper

Evaluating scatterometry 3D capabilities for EUV

Jie Li, Oleg Kritsun, Prasad Dasari, Catherine Volkman, Tom Wallow, Jiangtao Hu

Proceedings Volume 8681, 86810S (2013) https://doi.org/10.1117/12.2011675

KEYWORDS: Semiconducting wafers, Scatterometry, Metrology, Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, 3D metrology, Neodymium, Spectroscopic ellipsometry, Lithography

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Proceedings Article | 1 April 2013 Paper

Application of phase shift focus monitor in EUVL process control

Lei Sun, Sudhar Raghunathan, Vibhu Jindal, Eric Gullikson, Pawitter Mangat, Iacopo Mochi, Kenneth Goldberg, Markus Benk, Oleg Kritsun, Tom Wallow, Deniz Civay, Obert Wood

Proceedings Volume 8679, 86790T (2013) https://doi.org/10.1117/12.2011342

KEYWORDS: Phase shifts, Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Reflectivity, Etching, Diffraction, Diffraction gratings, Inspection, Microscopes

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Proceedings Article | 5 April 2012 Paper

Faster diffraction-based overlay measurements with smaller targets using 3D gratings

Jie Li, Oleg Kritsun, Yongdong Liu, Prasad Dasari, Catherine Volkman, Jiangtao Hu

Proceedings Volume 8324, 83241I (2012) https://doi.org/10.1117/12.916747

KEYWORDS: Semiconducting wafers, Overlay metrology, 3D acquisition, 3D metrology, Finite element methods, Diffraction gratings, Time metrology, Spectroscopy, Reflectance spectroscopy, 3D modeling

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Proceedings Article | 5 April 2012 Paper

Scatterometry metrology challenges of EUV

Prasad Dasari, Jie Li, Jiangtao Hu, Zhuan Liu, Oleg Kritsun, Catherine Volkman

Proceedings Volume 8324, 83240M (2012) https://doi.org/10.1117/12.916006

KEYWORDS: Scatterometry, Extreme ultraviolet lithography, Critical dimension metrology, Extreme ultraviolet, Metrology, Semiconducting wafers, Double patterning technology, Cadmium, Optical lithography, Ellipsometry

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Proceedings Article | 23 March 2012 Paper

EUV OPC for the 20-nm node and beyond

Chris Clifford, Yi Zou, Azat Latypov, Oleg Kritsun, Thomas Wallow, Harry Levinson, Fan Jiang, Deniz Civay, Keith Standiford, Ralph Schlief, Lei Sun, Obert Wood, Sudhar Raghunathan, Pawitter Mangat, Hui Peng Koh, Craig Higgins, Jeffrey Schefske, Mandeep Singh

Proceedings Volume 8322, 83221M (2012) https://doi.org/10.1117/12.916171

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Photomasks, Deep ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Critical dimension metrology, Printing, Monte Carlo methods

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Proceedings Article | 20 April 2011 Paper

Advancements of diffraction-based overlay metrology for double patterning

Jie Li, Oleg Kritsun, Yongdong Liu, Prasad Dasari, Ulrich Weher, Catherine Volkman, Martin Mazur, Jiangtao Hu

Proceedings Volume 7971, 79711Y (2011) https://doi.org/10.1117/12.879552

KEYWORDS: Overlay metrology, Double patterning technology, Reflectance spectroscopy, Detection and tracking algorithms, Time metrology, Semiconducting wafers, Diffraction, Diffraction gratings, Spectroscopy, Reflectometry

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Proceedings Article | 20 April 2011 Paper

Metrology characterization of spacer double patterning by scatterometry

Prasad Dasari, Jie Li, Jiangtao Hu, Zhuan Liu, Oleg Kritsun, Catherine Volkman

Proceedings Volume 7971, 797111 (2011) https://doi.org/10.1117/12.879900

KEYWORDS: Scatterometry, Critical dimension metrology, Semiconducting wafers, Metrology, Double patterning technology, Etching, Process control, Scatter measurement, Reflectometry, Scanning electron microscopy

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SPIE Journal Paper | 1 October 2010

Scatterometry characterization of spacer double patterning structures

Prasad Dasari, Jiangtao Hu, Zhuan Liu, Asher Tan, Oleg Kritsun, Catherine Volkman, Christopher Bencher

JM3, Vol. 9, Issue 04, 041309, (October 2010) https://doi.org/10.1117/12.10.1117/1.3531999

KEYWORDS: Scatterometry, Critical dimension metrology, Double patterning technology, Semiconducting wafers, Etching, Reflectance spectroscopy, Metrology, Spectroscopy, Reflectometry, Lithography

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Proceedings Article | 2 April 2010 Paper

Advanced diffraction-based overlay for double patterning

Jie Li, Yongdong Liu, Prasad Dasari, Jiangtao Hu, Nigel Smith, Oleg Kritsun, Catherine Volkman

Proceedings Volume 7638, 76382C (2010) https://doi.org/10.1117/12.848516

KEYWORDS: Overlay metrology, Double patterning technology, Spectroscopic ellipsometry, Semiconducting wafers, Time metrology, Optical components, Metrology, Diffraction, Integrated circuits, Critical dimension metrology

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Proceedings Article | 2 April 2010 Paper

Scatterometry characterization of spacer double patterning structures

Prasad Dasari, Jiangtao Hu, Zhuan Liu, Asher Tan, Oleg Kritsun, Catherine Volkman, Chris Bencher

Proceedings Volume 7638, 76381J (2010) https://doi.org/10.1117/12.848518

KEYWORDS: Scatterometry, Critical dimension metrology, Double patterning technology, Semiconducting wafers, Etching, Metrology, Overlay metrology, Scatter measurement, Spectroscopy, Ellipsometry

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Proceedings Article | 24 March 2009 Paper

Diffraction-based overlay metrology for double patterning technologies

Prasad Dasari, Rahul Korlahalli, Jie Li, Nigel Smith, Oleg Kritsun, Cathy Volkman

Proceedings Volume 7272, 727212 (2009) https://doi.org/10.1117/12.816590

KEYWORDS: Overlay metrology, Double patterning technology, Optical lithography, Data modeling, Metrology, Semiconducting wafers, Scatterometry, Spectroscopy, Lithography, Etching

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Proceedings Article | 23 March 2009 Paper

Simultaneous overlay and CD measurement for double patterning: scatterometry and RCWA approach

Jie Li, Zhuan Liu, Silvio Rabello, Prasad Dasari, Oleg Kritsun, Catherine Volkman, Jungchul Park, Lovejeet Singh

Proceedings Volume 7272, 727207 (2009) https://doi.org/10.1117/12.814706

KEYWORDS: Overlay metrology, Critical dimension metrology, Semiconducting wafers, Scatterometry, Double patterning technology, Error analysis, Reflectivity, Metrology, Cadmium, Diffraction gratings

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Proceedings Article | 20 March 2009 Paper

Characterization of a 0.25NA full-field EUV exposure tool

Oleg Kritsun, Bruno La Fontaine, Yudong Hao, Jie Li, Obert Wood, Sudharshanan Raghunathan, Tim Brunner, Chiew-Seng Koay, Hiroyuki Mizuno

Proceedings Volume 7271, 727121 (2009) https://doi.org/10.1117/12.816545

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Extreme ultraviolet lithography, Scanners, Scatterometry, Extreme ultraviolet, Reticles, Overlay metrology, Metrology, Diffraction gratings

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Proceedings Article | 16 March 2009 Paper

Calibrating OPC model with full CD profile data for 2D and 3D patterns using scatterometry

Aasutosh Dave, Oleg Kritsun, Yunfei Deng, Kenji Yoshimoto, Jie Li, Jiangtao Hu

Proceedings Volume 7274, 727415 (2009) https://doi.org/10.1117/12.814955

KEYWORDS: Data modeling, 3D modeling, Scatterometry, Calibration, Optical proximity correction, 3D metrology, Critical dimension metrology, Lithography, Line edge roughness, Cadmium

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Proceedings Article | 17 October 2008 Paper

Defining a physically accurate laser bandwidth input for optical proximity correction (OPC) and modeling

Ivan Lalovic, Oleg Kritsun, Sarah McGowan, Joseph Bendik, Mark Smith, Nigel Farrar

Proceedings Volume 7122, 71221R (2008) https://doi.org/10.1117/12.801556

KEYWORDS: Optical proximity correction, Lithography, Error analysis, Control systems, Data modeling, Statistical modeling, Systems modeling, Laser stabilization, Optical simulations, Photomasks

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In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian forms compared to using measurement-derived laser fingerprints. In this work, we show that the use of the common analytic functions can induce edge placement errors of several nanometers compared to the measured data and therefore do not offer significant improvement compared to the monochromatic assumption. On the other hand, the highlyaccurate laser spectrum data can be reduced to a manageable number of samples and still result in sub 0.5nm error through pitch and focus compared to measured spectra. We have previously demonstrated that a 23-point approximation to the laser data can be generated from the spectrometry data, which results in less than 0.1nm RMS error even over varied illumination settings. We investigate the further reduction in number of spectral samples down to five points and consider the resulting accuracy and model-robustness tradeoffs. We also extend our analysis as a function of numerical aperture and illumination setting to quantify the model robustness of the physical approximations. Given that adding information about the laser spectrum would primarily impact the model-generation run-times and not the run-times for the OPC implementation, these techniques should be straightforward to integrate with current full-chip OPC flows. Finally, we compare the relative performance of a monochromatic model, a 5-point laser-spectral fingerprint, and two Modified Lorentzian fits in a commercial OPC simulator for a 32nm logic lithography process. The model performance is compared at nominal process settings as well as through dose, focus and mask bias. Our conclusions point to the direction for integration of this approach within the framework of existing EDA tools and flows for OPC model generation and process-variability verification.

Proceedings Article | 1 April 2008 Paper

Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns

Oleg Kritsun, Bruno La Fontaine, Yongdong Liu, Chandra Saravanan

Proceedings Volume 6924, 69241M (2008) https://doi.org/10.1117/12.776783

KEYWORDS: Scatterometry, Double patterning technology, Optical proximity correction, 3D modeling, 3D metrology, Lithography, Critical dimension metrology, Scatter measurement, Overlay metrology, Metrology

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Proceedings Article | 22 March 2008 Paper

Evaluating diffraction based overlay metrology for double patterning technologies

Chandra Saru Saravanan, Yongdong Liu, Prasad Dasari, Oleg Kritsun, Catherine Volkman, Alden Acheta, Bruno La Fontaine

Proceedings Volume 6922, 69220C (2008) https://doi.org/10.1117/12.774736

KEYWORDS: Overlay metrology, Double patterning technology, Silicon, Scatterometry, Optical lithography, Diffraction, Spectroscopy, Critical dimension metrology, Photoresist materials, Metrology

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Proceedings Article | 30 October 2007 Paper

Fast and accurate laser bandwidth modeling of optical proximity effects

Ivan Lalovic, Oleg Kritsun, Joeseph Bendik, Mark Smith, Chris Sallee, Nigel Farrar

Proceedings Volume 6730, 67301X (2007) https://doi.org/10.1117/12.746594

KEYWORDS: Lithography, Optical simulations, Optical proximity correction, Critical dimension metrology, Laser stabilization, Control systems, Excimer lasers, Calibration, Computer simulations, Photoresist materials

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Proceedings Article | 4 April 2007 Paper

Evaluating a scatterometry-based focus monitor technique for hyper-NA lithography

Chandra Saru Saravanan, Srinivasan Nirmalgandhi, Oleg Kritsun, Alden Acheta, Richard Sandberg, Bruno La Fontaine, Harry Levinson, Kevin Lensing, Mircea Dusa, Jan Hauschild, Anita Pici

Proceedings Volume 6518, 651806 (2007) https://doi.org/10.1117/12.712470

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Scanners, Scatterometry, Finite element methods, Monochromatic aberrations, Reticles, Cadmium, Fused deposition modeling, Mathematical modeling

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Proceedings Article | 4 April 2007 Paper

Lithography process control using scatterometry metrology and semi-physical modeling

Kevin Lensing, Jason Cain, Amogh Prabhu, Alok Vaid, Robert Chong, Richard Good, Bruno LaFontaine, Oleg Kritsun

Proceedings Volume 6518, 651804 (2007) https://doi.org/10.1117/12.711548

KEYWORDS: Data modeling, Scatterometry, Critical dimension metrology, Lithography, Finite element methods, Reticles, Semiconducting wafers, Metrology, Process control, Systems modeling

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Proceedings Article | 26 March 2007 Paper

Evaluating the performance of a 193-nm hyper-NA immersion scanner using scatterometry

Oleg Kritsun, Bruno La Fontaine, Richard Sandberg, Alden Acheta, Harry Levinson, Kevin Lensing, Mircea Dusa, Jan Hauschild, Anita Pici, Chandra Saravanan, Kunie Primak, Rahul Korlahalli, Srinivasan Nirmalgandhi

Proceedings Volume 6520, 65200L (2007) https://doi.org/10.1117/12.715971

KEYWORDS: Semiconducting wafers, Scanners, Scatterometry, Critical dimension metrology, Metrology, Lithography, Modulation transfer functions, Cadmium, Spatial frequencies, Immersion lithography

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Showing 5 of 22 publications

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