Paper
31 December 2009 The effect of nitrogen doping on the multiple-pulse subpicosecond dielectric breakdown of hafnia films
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Abstract
A film of hafnium oxide, doped with 5 atomic % nitrogen, was prepared by dual-ion-beam-assisted deposition. The properties were compared to a pure hafnium oxide film. The damage threshold is lower for the nitrogen-doped film. However, the multiple-pulse damage threshold for a 1 kHz train of 800 fs pulses shows no drop relative to the singlepulse value. These results are discussed within the context of a multiple-damage model, based on midgap trapping states.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. N. Nguyen, L. A. Emmert, W. Rudolph, D. Patel, E. Krous, and C. S. Menoni "The effect of nitrogen doping on the multiple-pulse subpicosecond dielectric breakdown of hafnia films", Proc. SPIE 7504, Laser-Induced Damage in Optical Materials: 2009, 750402 (31 December 2009); https://doi.org/10.1117/12.836504
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KEYWORDS
Nitrogen

Laser damage threshold

Oxides

Doping

Hafnium

Electrons

Dielectric breakdown

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