The imaging study of a novel photopolymer used in I-line negative-tone resist

Lu Liu; Yingquan Zou

doi:10.1117/12.846435

29 March 2010 The imaging study of a novel photopolymer used in I-line negative-tone resist

Lu Liu, Yingquan Zou

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76391B (2010) https://doi.org/10.1117/12.846435
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

By copolymerization of 2-(2-diazo-3-oxo-3-(4-dimethylaminophenyl)propionyloxy)ethyl methacrylate (DODMAPPEA), methyl methacrylate (MMA) and 2-hydroxyethyl methacrylate (HEMA), a photoactive polymer for negative-tone resist is synthesized and its photolithographic properties are investigated. Since the maximum-absorption wavelength of the photoactive monomer DODMAPPEA is 356nm and it still has a comparatively large absorption at 365nm (I-line), the copolymer poly(DODMAPPEA -co-MMA-co-HEMA) is anticipated to be used in I-line single component negative-tone resist. Upon irradiaton, the diazoketo groups which are in the side chains of the copolymers undergo the wolff rearrangement, affording ketenes that react with hydroxyl to provide cross-linking photoproducts and a negative image is obtained. Besides that, cross-linking agent hexamethoxymethylmelamine (HMMM) is added to the resist system and high sensitivity is expected. This kind of copolymer has great value in I-line non-CARs, TFT-LCD and IC discrete devices processing and the anti-dry etching ability is enhanced by the introduction of the benzene ring. In addition, this copolymer still has potential value in Ultra-violate lithographic plate.

Citation Download Citation

Lu Liu and Yingquan Zou "The imaging study of a novel photopolymer used in I-line negative-tone resist", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391B (29 March 2010); https://doi.org/10.1117/12.846435

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