Paper
3 March 2010 Evaluation of double-patterning techniques for advanced logic nodes
Chiew-Seng Koay, Steven Holmes, Karen Petrillo, Matthew Colburn, Sean Burns, Shannon Dunn, Jason Cantone, David Hetzer, Shinichiro Kawakami, Youri van Dommelen, Aiqin Jiang, Michael Many, Robert Routh, Lior Huli, Brian Martinick, Martin Rodgers, Hideyuki Tomizawa, Sumanth Kini
Author Affiliations +
Abstract
The development of Double-Patterning (DP) techniques continues to push forward aiming to extend the immersion based lithography below 36 nm half pitch. There are widespread efforts to make DP viable for further scaling of semiconductor devices. We have developed Develop/Etch/Develop/Etch (DE2) and Double-Expose-Track-Optimized (DETO) techniques for producing pitch-split patterns capable of supporting semiconductor devices for the 16 nm and 11 nm nodes. The IBM Alliance has established a DETO baseline, in collaboration with ASML, TEL, CNSE, and KLATencor, to evaluate the manufacturability of DETO by using commercially available resist systems. Presented in this paper are the long-term performance results of these systems relevant to defectivity, overlay, and CD uniformity.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chiew-Seng Koay, Steven Holmes, Karen Petrillo, Matthew Colburn, Sean Burns, Shannon Dunn, Jason Cantone, David Hetzer, Shinichiro Kawakami, Youri van Dommelen, Aiqin Jiang, Michael Many, Robert Routh, Lior Huli, Brian Martinick, Martin Rodgers, Hideyuki Tomizawa, and Sumanth Kini "Evaluation of double-patterning techniques for advanced logic nodes", Proc. SPIE 7640, Optical Microlithography XXIII, 764009 (3 March 2010); https://doi.org/10.1117/12.846769
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Cited by 4 scholarly publications.
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KEYWORDS
Double patterning technology

Semiconducting wafers

Scanners

Overlay metrology

Photoresist processing

Chemical reactions

Scanning electron microscopy

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