Paper
21 February 2011 Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets
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Abstract
We present a systematic analysis of the optical properties of GaN nanorods (NRs) for the application in Light Emitting Diodes (LEDs). Our focus is on NR emitters incorporating active layers in the form of quantum-disc or core-shell geometries. We concentrate on the properties of individual NRs, neglecting any coupling with neighbouring NRs or ensemble effects. The distribution of power among guided and radiative modes as well as Purcell enhancement is discussed in detail in the context of different NR geometries, materials and the presence of interfaces.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Kölper, M. Sabathil, B. Witzigmann, F. Römer, W. Bergbauer, and M. Strassburg "Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets", Proc. SPIE 7933, Physics and Simulation of Optoelectronic Devices XIX, 793314 (21 February 2011); https://doi.org/10.1117/12.874984
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Cited by 6 scholarly publications and 3 patents.
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KEYWORDS
Gallium nitride

Interfaces

Light emitting diodes

Nanorods

Optical properties

Cladding

Mirrors

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