Dr. Martin Strassburg Profile

Dr. Martin Strassburg

Director at ams-OSRAM International GmbH

SPIE Involvement:

Conference Chair | Track Chair | Editor | Author

Proceedings Article | 7 March 2022 Poster

On-chip 3D confocal optical study of an InGaN/GaN microrod LED

Johanna Meier, Julius Kahl, Adrian Avramescu, Martin Strassburg, Gerd Bacher

Proceedings Volume PC12022, PC120220W (2022) https://doi.org/10.1117/12.2608532

KEYWORDS: Light emitting diodes, Confocal microscopy, Spatial resolution, Quantum wells, Polarization, Photonic crystals, Photonic crystal devices, Photon polarization, Optical microscopy, Luminescence

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Proceedings Article | 5 March 2022 Presentation + Paper

Micro-photoluminescence to investigate lateral diffusion of charge carriers in InGaN/GaN MQWs

Conny Becht, Michael Binder, Bastian Galler, Jürgen Off, Maximilian Tauer, Alvaro Gomez-Iglesias, Heng Wang, Martin Strassburg, Ulrich Theodor Schwarz

Proceedings Volume 12001, 1200103 (2022) https://doi.org/10.1117/12.2608901

KEYWORDS: Diffusion, Indium gallium nitride, Gallium nitride, Quantum wells, Light emitting diodes, Sapphire, Luminescence, Blue light emitting diodes

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Proceedings Article | 7 March 2021 Presentation

Welcome and Introduction to SPIE Conference 11706: Light-Emitting Devices, Materials, and Applications XXV

Jong Kyu Kim, Michael Krames, Martin Strassburg

Proceedings Volume 11706, 1170602 (2021) https://doi.org/10.1117/12.2592495

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Proceedings Article | 14 March 2018 Presentation

Carrier localization in InGaN-based light-emitting diodes (Conference Presentation)

Felix Nippert, Sergey Karpov, Markus Wagner, Gordon Callsen, Thomas Kure, Bastian Galler, Hans-Jürgen Lugauer, Martin Strassburg, Axel Hoffmann

Proceedings Volume 10554, 105540D (2018) https://doi.org/10.1117/12.2292437

KEYWORDS: Light emitting diodes, Quantum efficiency, Applied physics, Indium, Electrons, Quantum wells, Electro optics, Electroluminescence, Internal quantum efficiency, Indium gallium nitride

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Proceedings Article | 8 March 2016 Paper

AlGaInP red-emitting light emitting diode under extremely high pulsed pumping

Amit Yadav, Ilya Titkov, Grigorii Sokolovskii, Sergey Karpov, Vladislav Dudelev, Ksenya Soboleva, Martin Strassburg, Ines Pietzonka, Hans-Juergen Lugauer, Edik Rafailov

Proceedings Volume 9768, 97681K (2016) https://doi.org/10.1117/12.2213344

KEYWORDS: Continuous wave operation, Light emitting diodes, Aluminium gallium indium phosphide, Crystals, Modeling, LED lighting, Solid state lighting, Indium gallium nitride, External quantum efficiency, Electroluminescence, Quantum wells, Gallium arsenide, Oscilloscopes, Photonics

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Proceedings Article | 8 March 2016 Paper

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

M. Mohajerani, S. Khachadorian, C. Nenstiel, T. Schimpke, A. Avramescu, M. Strassburg, A. Hoffmann, A. Waag

Proceedings Volume 9768, 976803 (2016) https://doi.org/10.1117/12.2212890

KEYWORDS: Raman spectroscopy, Gallium nitride, Doping, Light emitting diodes, Luminescence, Crystals, Sapphire, Silicon, Plasmons, Electrons

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Proceedings Article | 8 March 2016 Paper

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

Tilman Schimpke, H.-J. Lugauer, A. Avramescu, T. Varghese, A. Koller, J. Hartmann, J. Ledig, A. Waag, M. Strassburg

Proceedings Volume 9768, 97680T (2016) https://doi.org/10.1117/12.2214122

KEYWORDS: 3D microstructuring, Electroluminescence, Microtechnology, Nanoepitaxy, Optical microcavities, Light emitting diodes, Quantum wells, 3D metrology, Gallium nitride, Transmission electron microscopy, Nanolithography, Electro optics, Indium gallium nitride, Vapor phase epitaxy, External quantum efficiency, Photomasks, Semiconducting wafers, Transparent conductors, Luminescence

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Proceedings Article | 27 February 2014 Paper

Long wavelength nanowire light emitting diodes

Pallab Bhattacharya, Shafat Jahangir, Ethan Stark, Martin Mandl, Tilman Schimpke, Martin Strassburg

Proceedings Volume 9003, 90030H (2014) https://doi.org/10.1117/12.2042813

KEYWORDS: Light emitting diodes, Silicon, Gallium nitride, Indium gallium nitride, Heterojunctions, External quantum efficiency, Temperature metrology, Electroluminescence, Polarization, Nanowires

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Proceedings Article | 28 February 2012 Paper

Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

Friedhard Römer, Marcus Deppner, Zhelio Andreev, Christopher Kölper, Matthias Sabathil, Martin Strassburg, Johannes Ledig, Shunfeng Li, Andreas Waag, Bernd Witzigmann

Proceedings Volume 8255, 82550H (2012) https://doi.org/10.1117/12.908207

KEYWORDS: Light emitting diodes, Quantum wells, Luminescence, Absorption, Gallium nitride, Quantum efficiency, Polarization, Internal quantum efficiency, Quantization, Nanowires

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Proceedings Article | 4 April 2011 Paper

Fabrication of hole pattern for position-controlled MOVPE-grown GaN nanorods with highly precise nanoimprint technology

Torbjörn Eriksson, Ki-Dong Lee, Babak Heidari, Patrick Rode, Werner Bergbauer, Martin Mandl, Christopher Kölper, Martin Strassburg

Proceedings Volume 7970, 797015 (2011) https://doi.org/10.1117/12.879368

KEYWORDS: Nanoimprint lithography, Gallium nitride, Nanostructures, Semiconducting wafers, Scanning electron microscopy, Etching, Silica, Nanotechnology, Manufacturing, Nanorods

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Proceedings Article | 21 February 2011 Paper

Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets

C. Kölper, M. Sabathil, B. Witzigmann, F. Römer, W. Bergbauer, M. Strassburg

Proceedings Volume 7933, 793314 (2011) https://doi.org/10.1117/12.874984

KEYWORDS: Gallium nitride, Interfaces, Light emitting diodes, Optical properties, Cladding, Mirrors, Silver, Refractive index, Phase shifts, Nanorods

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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Proceedings Article | 3 March 2006 Paper

Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors

Matthew Kane, Martin Strassburg, Ali Asghar, Nola Li, Will Fenwick, Ian Ferguson

Proceedings Volume 6121, 61210L (2006) https://doi.org/10.1117/12.659025

KEYWORDS: Manganese, Gallium, Magnetism, Gallium nitride, Ions, Silicon, Raman spectroscopy, Magnetic semiconductors, Metalorganic chemical vapor deposition, Ferromagnetics

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Wide bandgap nitrides and oxides have been heralded as a possible platform for future semiconductor spintronics applications based on the inherent compatibility of these materials with existing semiconductors as well as theoretical predictions of room temperature ferromagnetism. Experimental reports of room temperature ferromagnetism in these materials are complicated by disparate crystalline quality and phase purity in these materials, as well as conflicting theoretical predictions as to the nature of ferromagnetic behavior in this system. A complete understanding of these materials, and ultimately intelligent design of spintronic devices, will require an exploration of the relationship between the processing techniques, resulting transition metal atom configuration, defects, and electronic compensation as related to the structure, magnetic, and magneto-optical properties of this material. This work explores the growth and properties of Ga_1-xMn_xN films by metalorganic chemical vapor deposition on cplane sapphire substrates with varying thickness, Mn concentration, and alloying elements. Homogenous Mn incorporation throughout the films was verified with Secondary Ion Mass Spectroscopy (SIMS), and no macroscopic second phases were detected using X-ray diffraction (XRD). SQUID and vibrating sample magnetometry measurements showed an apparent room temperature ferromagnetic hysteresis, whose strength can be altered considerably through annealing and introduction of either Si or Mg during the growth process. Three sets of Raman modes appeared to be sensitive to Mn incorporation. The intensities of a broad band around 300cm^-1 and sharper modes near 669cm^-1 increased with increasing Mn concentration. The rise of the former is attributed to a decrease in long-range lattice ordering for higher Mn concentration. The second mode is due to nitrogen vacancy-related local vibrational modes of the GaN host lattice. Si co-doped Ga_1-xMn_xN results in shallow donor states in GaN suppress the formation of nitrogen vacancies by compensating the p-type deep level defects introduced by substitutional Mn. The formation of a Mn-related midgap impurity band is observed via optical transmission measurement in Ga_1-xMn_xN with strong magnetic signatures, but not for Si co-doped samples. Initial studies on light emitting diodes (LEDs) containing a Mn-doped active region have also been produced. Devices were fabricated with different Mn-doped active layer thicknesses, and I-V characteristics show that the devices become highly resistive as thickness of the Mn-doped active layer increases. The electroluminescence of these devices is dominated by a high suppressed band-edge recombination and a midgap defect-related emission, leading to an orange-colored but weakly emitting LED. These results suggest that traditional theoretical and device approaches akin to those realized in Ga_1-xMn_xN may be difficult to realize in Ga_1-xMn_xN, and exploitation of these materials will require further novel device approaches taking into account the nature of this material.

Proceedings Article | 21 September 2005 Paper

The growth of InN and related alloys by high-pressure CVD

Nikolaus Dietz, Mustafa Alevli, Hun Kang, Martin Strassburg, Vincent Woods, Ian Ferguson, Craig Moore, Beatriz Cardelino

Proceedings Volume 5912, 59120E (2005) https://doi.org/10.1117/12.616699

KEYWORDS: Indium nitride, Absorption, Indium, Chemical vapor deposition, Chemistry, Gallium, Ultraviolet radiation, Aluminum, Nitrogen, Optoelectronics

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Proceedings Article | 25 March 2005 Paper

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Matthew Kane, Martin Strassburg, Ali Asghar, Qing Song, Shalini Gupta, Jayantha Senawiratne, Christoph Hums, Ute Haboeck, Axel Hoffmann, Dmitry Azamat, Wolfgang Gehlhoff, Nikolaus Dietz, Z. John Zhang, Christopher Summers, Ian Ferguson

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.582980

KEYWORDS: Manganese, Gallium, Gallium nitride, Magnetism, Nanostructures, Annealing, Metalorganic chemical vapor deposition, Silicon, Magnetic semiconductors, Ferromagnetics

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