Paper
7 February 2011 Quantum efficiency increasing and lasing in the quantum wells based on ZnO
Author Affiliations +
Proceedings Volume 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies; 79940T (2011) https://doi.org/10.1117/12.881484
Event: International Conference on Coherent and Nonlinear Optics (ICONO 2010) and International Conference on Lasers, Applications and Technologies (LAT 2010), 2010, Kazan, Russian Federation
Abstract
The Mg0.27Zn0.73O/ZnO multiple quantum wells with different well width Lw have been grown by pulsed laser deposition method. The interface roughness of quantum wells was inherited from the bottom one and did not exceed 1 nm. The quantum confinement effect has been observed. The exciton binding energy of the two-dimensional Mg0.27Zn0.73O/ZnO structures was two times higher in comparison with the bulk ZnO. A sharp increase of exciton peak intensity in the photoluminescence spectra at well width reduction was observed. The optical excited stimulated emission in quantum wells Mg 0.27Zn0.73O/ZnO with an excitation threshold ~210 kW/cm2 has been demonstrated.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrey A. Lotin, Oleg A. Novodvorsky, Liubov S. Parshina, Evgeny V. Khaydukov, Dmitry A. Zuev, Olga D. Khramova, and Vladislav Ya. Panchenko "Quantum efficiency increasing and lasing in the quantum wells based on ZnO", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940T (7 February 2011); https://doi.org/10.1117/12.881484
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Excitons

Quantum wells

Zinc oxide

Luminescence

Excimer lasers

Interfaces

Quantum efficiency

Back to Top