Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique

Michael Griesbeck; Mikhail Glazov; Eugene Sherman; Tobias Korn; Dieter Schuh; Werner Wegscheider; Christian Schüller

doi:10.1117/12.893539

15 September 2011 Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique

Michael Griesbeck, Mikhail Glazov, Eugene Sherman, Tobias Korn, Dieter Schuh, Werner Wegscheider, Christian Schüller

Author Affiliations +

Proceedings Volume 8100, Spintronics IV; 810015 (2011) https://doi.org/10.1117/12.893539
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Spin dynamics in zincblende two-dimensional electron systems is usually dominated by the Dyakonov-Perel spin dephasing mechanism resulting from the underlying spin-orbit fields. An exceptional situation is realized in symmetrically grown and doped GaAs/AlGaAs quantum wells grown along the [110] direction, where the Rashba contribution is negligible and the effective Dresselhaus spin-orbit field is perpendicular to the sample plane. In such a system the spin dephasing times for in- and out-of-plane crystallographic directions are expected to be strongly different and the out-of-plane spin dephasing time is significantly enhanced as compared with conventional systems. We observe the spin relaxation anisotropy by resonant spin amplification measurements in a 30 nm wide double-sided symmetrically δ-doped single quantum well with a very high mobility of about 3•10⁶ cm²/Vs at 1.5K. A comparison of the measured resonant spin amplification traces with the developed theory taking into account the spin dephasing anisotropy yields the dephasing times whose anisotropy and magnitudes are in-line with the theoretical expectations.

Citation Download Citation

Michael Griesbeck, Mikhail Glazov, Eugene Sherman, Tobias Korn, Dieter Schuh, Werner Wegscheider, and Christian Schüller "Anisotropic spin dephasing in a (110)-grown high-mobility GaAs/AlGaAs quantum well measured by resonant spin amplification technique", Proc. SPIE 8100, Spintronics IV, 810015 (15 September 2011); https://doi.org/10.1117/12.893539

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available